| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,450 pcs
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2450 pcs | On Request | 1 | On Request | On Request | 2009 | On Request | On Request |
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The KEC KTC9018S-H-RTK/P is an NPN bipolar junction transistor (BJT) suitable for general-purpose amplification and switching applications. It is housed in a compact SOT-23 surface-mount package.
Key electrical characteristics include a maximum collector current (Ic) of 20mA and a collector-emitter breakdown voltage (Vceo) of 30V. The transistor offers a typical DC current gain (Hfe) of 54 at 1mA and 5V, with a transition frequency (Ft) of 800MHz. The maximum power dissipation is rated at 350mW, and it can operate at temperatures up to 150°C.
This component is designed for surface mounting, making it suitable for high-density circuit boards. Its specifications make it a viable option for signal processing and amplification circuits where small signal control is required.
It is an NPN bipolar junction transistor.
The maximum collector current is 20 mA.
The transition frequency is 800 MHz.
It comes in a SOT-23-3 surface mount package.
The maximum operating temperature is +150 °C.
The typical DC current gain is 54 when tested at 1 mA and 5 V.