KTC9018S-H-RTK/P The KEC KTC9018S-H-RTK/P is an NPN bipolar transistor designed for various electronic applications. It features a 30V collector-emitter breakdown voltage and a 20mA maximum collector current.
Mfr Part #:

KTC9018S-H-RTK/P

Available from 1 distributors
Mfr Name: KEC
KEC
The KEC KTC9018S-H-RTK/P is an NPN bipolar transistor designed for various electronic applications. It features a 30V collector-emitter breakdown voltage and a 20mA maximum collector current.
✓ Total Stock: 2,450 pcs

KTC9018S-H-RTK/P Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,450 pcs
2450 pcs On Request 1 On Request On Request 2009 On Request On Request

KTC9018S-H-RTK/P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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KTC9018S-H-RTK/P Description

Short technical summary and product information.

The KEC KTC9018S-H-RTK/P is an NPN bipolar junction transistor (BJT) suitable for general-purpose amplification and switching applications. It is housed in a compact SOT-23 surface-mount package.

 

Key electrical characteristics include a maximum collector current (Ic) of 20mA and a collector-emitter breakdown voltage (Vceo) of 30V. The transistor offers a typical DC current gain (Hfe) of 54 at 1mA and 5V, with a transition frequency (Ft) of 800MHz. The maximum power dissipation is rated at 350mW, and it can operate at temperatures up to 150°C.

 

This component is designed for surface mounting, making it suitable for high-density circuit boards. Its specifications make it a viable option for signal processing and amplification circuits where small signal control is required.

KTC9018S-H-RTK/P Quick Information

Product Type: Bipolar Transistor
Canonical Name: KTC9018S-H-RTK/P NPN Bipolar Transistor
Subcategory: BJT

KTC9018S-H-RTK/P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KTC9018S-H-RTK/P Features

  • NPN bipolar transistor for general use.
  • 30V collector-emitter breakdown voltage.
  • 20mA maximum collector current.
  • 800MHz transition frequency.
  • Compact SOT-23 surface-mount package.

KTC9018S-H-RTK/P Applications

  • Ideal for RF signal amplification in communication devices.
  • Used in wireless sensor networks and IoT transceivers.
  • Suitable for oscillator circuits in consumer electronics.
  • Applied in RF filtering and modulation stages.

KTC9018S-H-RTK/P FAQs

6 frequently asked questions generated from this part’s specifications.
What type of transistor is the KTC9018S-H-RTK/P?

It is an NPN bipolar junction transistor.

What is the maximum collector current for this component?

The maximum collector current is 20 mA.

What is the transition frequency of the KTC9018S-H-RTK/P?

The transition frequency is 800 MHz.

What packaging does this transistor use?

It comes in a SOT-23-3 surface mount package.

What is the maximum operating junction temperature?

The maximum operating temperature is +150 °C.

What is the typical DC current gain at standard test conditions?

The typical DC current gain is 54 when tested at 1 mA and 5 V.

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