| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,544 pcs
|
1544 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Spacing | |
| Power Dissipation |
The KTA1266-Y-AT/P is a Bipolar Junction Transistor (BJT) manufactured by KEC Semicon. This component is housed in a TO-92 package with a 2.54mm lead spacing.
Key electrical specifications include a collector-emitter breakdown voltage of 50V, a maximum collector current of 150mA, and a power dissipation of 625mW. The DC current gain (hFE) is typically 70 at 2mA and 6V, with a transition frequency (fT) of 80MHz. The collector-emitter saturation voltage (Vce(sat)) is 100mV at 100mA and 10mA, and the collector cut-off current (Icbo) is 100nA.
This transistor is suitable for various electronic applications requiring a general-purpose NPN transistor. Its TO-92 package is common for through-hole mounting and ease of integration into circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (Vceo) is 50V.
The maximum collector current (Ic) is 150mA.
The power dissipation (Pd) is 625mW.
The DC current gain (hFE) is typically 70 at 2mA collector current and 6V collector-emitter voltage.
The KTA1266-Y-AT/P is supplied in a TO-92 package.
The RoHS status is RoHS3 Compliant.