| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,353,363 pcs
|
1353363 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
45 pcs
|
45 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The KST43MTF from On Semiconductor is a single NPN bipolar junction transistor (BJT) housed in a SOT-23-3 package. This device is designed for surface mount applications and offers a breakdown voltage of 200V and a continuous collector current of up to 500mA.
Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 30mA and 10V, and a Vce saturation of 500mV maximum at 2mA/20mA. The transistor operates at a maximum frequency of 50MHz and can dissipate up to 350mW of power. Its operating temperature range is from -55°C to 150°C (TJ).
This component is suitable for various general-purpose amplification and switching applications where a compact, surface-mountable NPN transistor is required. The SOT-23-3 package is standard for many automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 200V.
The maximum continuous collector current is 500mA.
The KST43MTF is supplied in a TO-236-3, SC-59, SOT-23-3 package.
The operating temperature range is -55°C to 150°C (TJ).
The KST43MTF is RoHS3 compliant.