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KST2907A

The KST2907A is a PNP Epitaxial Silicon Transistor from Samsung Electronics. It offers a -60V collector-emitter voltage and a -600mA collector current.

✓ Total Stock: 904,000 pcs

$ Price Range: $0.99

KST2907A Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Romaks Technologies ✓ Non-Authorised Inventory information	904,000 pcs On Request	904000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

KST2907A Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Samsung Electronics
Mounting Type	Surface Mount
SVHC Present	Not Present
Storage Temperature	-150 to 150

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KST2907A Description

Short technical summary and product information.

The KST2907A is a PNP Epitaxial Silicon Transistor manufactured by Samsung Electronics. It is designed for general-purpose applications and comes in a SOT-23 surface-mount package.

Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of -60V and a continuous collector current (IC) of -600mA. The device exhibits a DC current gain (hFE) ranging from 50 to 300 depending on the operating conditions. Its current gain bandwidth product (fT) is 200MHz at IC=-50mA and VCE=-20V.

Saturation voltages are specified as VCE(sat) of -0.4V maximum at IC=-150mA, IB=-15mA, and VBE(sat) of -1.3V maximum under the same conditions. The transistor also features a typical turn-on time (tON) of 50ns and a turn-off time (tOFF) of 110ns.

Absolute maximum ratings include a collector-base voltage (VCBO) of -60V, emitter-base voltage (VEBO) of -5V, and collector power dissipation (PC) of 350mW. The storage temperature range is -150°C to 150°C.

KST2907A Quick Information

Product Type: Bipolar Transistor

Canonical Name: KST2907A PNP Epitaxial Silicon Transistor

Subcategory: Single

KST2907A Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

KST2907A Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KST2907A Features

PNP Epitaxial Silicon Transistor
-60V Collector-Emitter Voltage
-600mA Continuous Collector Current
200MHz Gain Bandwidth Product
SOT-23 Surface Mount Package

KST2907A Applications

General purpose switching and amplification circuits.
Driver stages in low-power audio amplifiers.
Signal processing in consumer electronics.
Interface circuits for microcontrollers and sensors.

KST2907A FAQs

7 frequently asked questions generated from this part’s specifications.

What is the package type of the KST2907A?

The KST2907A is available in a SOT-23 surface mount package.

What are the maximum voltage ratings for the KST2907A?

The collector-base voltage (VCBO) is -60V, collector-emitter voltage (VCEO) is -60V, and emitter-base voltage (VEBO) is -5V.

What is the maximum collector current for the KST2907A?

The maximum continuous collector current (IC) is -600mA.

What is the DC current gain (hFE) of the KST2907A?

The DC current gain ranges from a minimum of 75 at IC=0.1mA to a maximum of 300 at IC=150mA, with typical values of 100 at IC=1mA to 150mA.

What is the saturation voltage of the KST2907A?

The collector-emitter saturation voltage (VCE(sat)) is maximum -0.4V at IC=150mA and -1.6V at IC=500mA. Base-emitter saturation voltage (VBE(sat)) is maximum -1.3V at IC=150mA and -2.6V at IC=500mA.

What is the gain-bandwidth product of the KST2907A?

The current gain bandwidth product (fT) is 200MHz minimum at IC=50mA, VCE=20V.

What are the switching times of the KST2907A?

Typical turn-on time (tON) is 50ns and turn-off time (tOFF) is 110ns under specified test conditions.