| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,840 pcs
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1840 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KST2222A-TF from Samsung Electronics is an NPN bipolar junction transistor (BJT) suitable for various electronic circuits. It operates with a maximum collector-emitter voltage of 40V and can handle a continuous collector current of up to 600mA, with a typical continuous collector current of 200mA at specific test conditions. The transistor exhibits a typical DC current gain (hFE) of 100.
This component is housed in a surface-mount SOT-23 package, making it ideal for compact designs where space is a constraint. The operating temperature range is from -55°C to 150°C, ensuring reliability across a wide spectrum of environmental conditions. Its RoHS3 compliance status is noted, though it requires verification.
The KST2222A-TF is a versatile component for amplification and switching applications in consumer electronics, industrial controls, and telecommunications equipment.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The KST2222A-TF is an NPN bipolar junction transistor.
The maximum collector-emitter voltage for the KST2222A-TF is 40V.
The maximum continuous collector current for the KST2222A-TF is 600mA.
The typical DC current gain (hFE) of the KST2222A-TF is 100.
The operating temperature range for the KST2222A-TF is -55°C to 150°C.
The KST2222A-TF is supplied in a SOT-23 package.