| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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84,000 pcs
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84000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KST05MTF is a single NPN bipolar junction transistor (BJT) manufactured by On Semiconductor. This epitaxial silicon transistor is designed for surface mount applications and comes in a compact SOT-23-3 package.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 60V and a maximum continuous collector current (IC) of 0.5A. The transistor features a minimum DC current gain (hFE) of 50 at 100mA and 1V, and a saturation voltage (VCE(sat)) of 250mV maximum at 10mA and 100mA. Its maximum operating frequency is 100MHz.
The KST05MTF has a maximum power dissipation of 350mW and can operate at temperatures up to 150°C. It is supplied in tape and reel packaging, suitable for automated assembly processes.
This transistor is suitable for various general-purpose amplification and switching applications where a small, surface-mountable NPN transistor is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the KST05MTF is 60V.
The maximum continuous collector current (IC) for the KST05MTF is 0.5A.
The minimum DC current gain (hFE) is 50 at 100mA and 1V.
The KST05MTF can operate at temperatures up to 150°C.
The KST05MTF is supplied in a SOT-23-3 surface mount package.
Yes, the KST05MTF is RoHS3 Compliant.