| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | 0621+ | On Request | On Request |
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The On Semiconductor KSP56TA is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in a TO-92-3 package and designed for through-hole mounting.
Key electrical specifications include a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 500mA. The DC current gain (hFE) is a minimum of 50 at 100mA and 1V. Saturation voltage (Vce Sat) is specified at a maximum of 250mV at 10mA and 100mA. The transistor operates at frequencies up to 50MHz and has a maximum power dissipation of 625mW.
This component is rated for an operating junction temperature of 150°C. Its packaging is Tape & Box (TB), and it is supplied in a TO-226-3, TO-92-3 (TO-226AA) package with formed leads.
The KSP56TA is identified by its part number KSP56TA and manufacturer On Semiconductor. It is also known by the distributor part number KSP56TA-ND.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage for the KSP56TA is 80V.
The minimum DC current gain (hFE) for the KSP56TA is 50 at 100mA and 1V.
The KSP56TA transistor can operate at junction temperatures up to 150°C.
The KSP56TA transistor is supplied in a TO-226-3, TO-92-3 (TO-226AA) package with formed leads.
The Vce Saturation (Max) for the KSP56TA is 250mV at 10mA and 100mA.