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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
41,494 pcs
|
41494 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The On Semiconductor KSP55TA is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It offers a collector-emitter breakdown voltage of 60V and can handle a maximum collector current of 500mA. The transistor has a maximum power dissipation of 625mW and a transition frequency of 50MHz.
This component is housed in a TO-92-3 package, designed for through-hole mounting. The operating temperature range extends up to 150°C (TJ). The DC current gain (hFE) is a minimum of 50 at 100mA and 1V, with a Vce saturation of 250mV maximum at 10mA collector current and 100mA base current. The collector cutoff current is a maximum of 100nA.
The KSP55TA is RoHS3 compliant, indicating adherence to certain environmental standards regarding hazardous substances. Its through-hole mounting makes it suitable for traditional PCB assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 60V.
The maximum collector current is 500mA.
The maximum power dissipation is 625mW.
The transition frequency is 50MHz.
The operating temperature range is up to 150°C (TJ).
The KSP55TA is designed for through-hole mounting.
The package type is TO-92-3.