KSP42BU The KSP42BU is an NPN epitaxial silicon transistor from ON Semiconductor. It features a 300V collector-emitter voltage and 500mA collector current.
Mfr Part #:

KSP42BU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The KSP42BU is an NPN epitaxial silicon transistor from ON Semiconductor. It features a 300V collector-emitter voltage and 500mA collector current.
Total Stock: 74,167 pcs
$ Price Range: $0.99

KSP42BU Available from 2 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
48,678 pcs
48678 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
25,489 pcs
25489 pcs On Request 1 On Request On Request On Request On Request On Request

KSP42BU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
BFR Free
Base - Emitter Saturation Voltage
Collector Current (Maximum)
Collector Cut-Off Current (Maximum @ KSP 42, VCB = 200 V, IE = 0)
Collector Cut-Off Current (Maximum @ KSP 43, VCB = 160 V, IE = 0)
Collector Emitter Saturation Voltage (Maximum @ IC = 20 mA, IB = 2 mA)
Collector Emitter Voltage (Maximum)
Collector Power Dissipation
Collector-Base Breakdown Voltage (Minimum @ KSP 42, IC = 100 μA, IE = 0)
Collector-Base Breakdown Voltage (Minimum @ KSP 43, IC = 100 μA, IE = 0)
Collector-Base Voltage (Maximum @ KSP 42)
Collector-Base Voltage (Maximum @ KSP 43)
Collector-Emitter Breakdown Voltage (Minimum @ KSP 42, IC = 1 mA, IB = 0)
Collector-Emitter Breakdown Voltage (Minimum @ KSP 43, IC = 1 mA, IB = 0)
Collector-Emitter Saturation Voltage (Maximum @ 2 mA, 20 mA)
Collector-Emitter Voltage (Maximum @ KSP 42)
Collector-Emitter Voltage (Maximum @ KSP 43)
Current
Current-Gain - Bandwidth Product
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Minimum @ 30 mA, 10 V)
DC Current Gain (hFE) (Minimum @ VCE = 10 V, IC = 1 mA)
DC Current Gain (hFE) (Minimum @ VCE = 10 V, IC = 10 mA)
DC Current Gain (hFE) (Minimum @ VCE = 10 V, IC = 30 mA)
Emitter Cut-Off Current (Maximum @ KSP 42, VEB = 6 V, IC = 0)
Emitter Cut-Off Current (Maximum @ KSP 43, VEB = 4 V, IC = 0)
Emitter-Base Breakdown Voltage
Emitter-Base Voltage
Frequency
Halogen Free
Junction Temperature
Mounting Type
Operating Temperature
Output Capacitance (Maximum @ KSP 42, VCB = 20 V, IE = 0, f = 1 MHz)
Output Capacitance (Maximum @ KSP 43, VCB = 20 V, IE = 0, f = 1 MHz)
Pb-Free
Power
Power Dissipation
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Transition Frequency
Vce Saturation (Max) @ Ib, Ic
Voltage

KSP42BU Description

Short technical summary and product information.

The KSP42BU is a single NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for general-purpose applications requiring high voltage capabilities.

 

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 300V for the KSP42 variant and 200V for the KSP43 variant. The device can handle a continuous collector current (IC) of up to 500mA and has a maximum power dissipation (PC) of 625mW. The DC current gain (hFE) is a minimum of 40 at 30mA collector current and 10V collector-emitter voltage. The transition frequency (fT) is 50MHz.

 

The transistor is housed in a TO-92-3 package, suitable for through-hole mounting. It operates within a junction temperature range of -55°C to 150°C. The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

KSP42BU Quick Information

Product Type: Transistor
Canonical Name: KSP42BU NPN Epitaxial Silicon Transistor
Subcategory: Single

KSP42BU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSP42BU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSP42BU Features

  • 300V collector-emitter voltage rating.
  • 500mA continuous collector current.
  • 625mW maximum power dissipation.
  • NPN epitaxial silicon transistor.
  • TO-92 package for through-hole mounting.

KSP42BU Applications

  • Suitable for high voltage switching.
  • General purpose amplification circuits.
  • Power supply regulation applications.
  • Used in electronic control modules.

KSP42BU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the KSP42BU?

The maximum collector-emitter voltage (VCEO) for the KSP42BU is 300 V.

What is the maximum continuous collector current for the KSP42BU?

The maximum continuous collector current (IC) for the KSP42BU is 500 mA.

What is the power dissipation of the KSP42BU transistor?

The KSP42BU has a maximum power dissipation of 625 mW.

What is the operating temperature range for the KSP42BU?

The operating junction temperature range for the KSP42BU is -55°C to 150°C.

What package type is the KSP42BU supplied in?

The KSP42BU is supplied in a TO-92-3 package.

Is the KSP42BU RoHS compliant?

Yes, the KSP42BU is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for the KSP42BU?

The Moisture Sensitivity Level (MSL) for the KSP42BU is 1 Unlimited.

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