KSP2907ATA The KSP2907ATA is a PNP bipolar transistor from On Semiconductor with a 60V collector-emitter voltage and 600mA current rating. It is supplied in a TO-92-3 package.
Mfr Part #:

KSP2907ATA

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The KSP2907ATA is a PNP bipolar transistor from On Semiconductor with a 60V collector-emitter voltage and 600mA current rating. It is supplied in a TO-92-3 package.
Total Stock: 48,800 pcs
$ Price Range: $0.99

KSP2907ATA Available from 2 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
47,800 pcs
47800 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

KSP2907ATA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

KSP2907ATA Description

Short technical summary and product information.

The KSP2907ATA is a PNP bipolar junction transistor (BJT) manufactured by On Semiconductor. This component is designed for general-purpose amplification and switching applications.

 

Key electrical characteristics include a maximum collector-emitter voltage of 60V and a continuous collector current rating of 600mA. The transistor offers a DC current gain (hFE) of at least 100 at 150mA and 10V. Its Vce saturation is specified at a maximum of 1.6V under specific base and collector current conditions. The device has a power dissipation rating of 625mW and a transition frequency of 200MHz.

 

This transistor operates at temperatures up to 150°C (TJ). It is housed in a TO-92-3 package, suitable for through-hole mounting. The KSP2907ATA is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected.

 

This component is suitable for various electronic circuits requiring a reliable PNP transistor. Its specifications make it a viable option for signal amplification, switching, and other general-purpose applications in consumer and industrial electronics.

KSP2907ATA Quick Information

Product Type: Bipolar Transistor
Canonical Name: KSP2907ATA PNP Bipolar Transistor
Subcategory: Bipolar (BJT) - Single

KSP2907ATA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSP2907ATA Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSP2907ATA Features

  • PNP bipolar junction transistor.
  • 60V collector-emitter voltage rating.
  • 600mA continuous collector current.
  • 625mW power dissipation.
  • TO-92-3 through-hole package.

KSP2907ATA Applications

  • Suitable for low-side switching applications.
  • Used in audio amplifier circuits.
  • Ideal for general switching in electronic devices.
  • Applicable in power regulation circuits.

KSP2907ATA FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the KSP2907ATA?

The collector-emitter voltage for the KSP2907ATA is 60V.

What is the maximum continuous collector current?

The maximum continuous collector current is 600mA.

What is the power dissipation of the KSP2907ATA?

The power dissipation is 625mW.

What is the operating temperature range?

The operating temperature is up to 150°C (TJ).

What package type is the KSP2907ATA supplied in?

The KSP2907ATA is supplied in a TO-92-3 package.

What is the DC Current Gain (hFE) of this transistor?

The DC Current Gain (hFE) is a minimum of 100 at 150mA collector current and 10V collector-emitter voltage.

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