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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
569 pcs
|
569 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSP2907ABU from ON Semiconductor is a PNP bipolar junction transistor (BJT) housed in a TO-92-3 package. This component is designed for through-hole mounting and offers a collector-emitter voltage (VCEO) of up to -60V and a continuous collector current (IC) of 600mA.
Key electrical characteristics include a maximum power dissipation of 625mW and a gain bandwidth product (fT) of 200MHz. The transistor exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V, with a saturation voltage (VCE(sat)) of 1.6V at 50mA and 500mA. It operates within a temperature range of -55°C to +150°C.
This transistor is suitable for various switching and amplification applications where a PNP type is required. Its standard TO-92 package and through-hole mounting make it easy to integrate into existing circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-60 V
600 mA
625 mW
-55°C to +150°C
TO-226-3, TO-92-3 (TO-226AA)
Through Hole