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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,239 pcs
|
28239 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
23,020 pcs
|
23020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
394 pcs
|
394 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (Minimum @ BVCBO, IC = 10 mA, IE = 0) | |
| Breakdown Voltage (Minimum @ BVCEO, IC = 10 mA, IB = 0) | |
| Breakdown Voltage (Minimum @ BVEBO, IE = 10 mA, IC = 0) | |
| Collector-Emitter Voltage | |
| Current | |
| Current Gain (@ VCE = 10 V, IC = 150 mA) | |
| Current Gain (Minimum @ VCE = 10 V, IC = 500 mA) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Forward Voltage (@ VBE(on), IC = 150 mA, IB = 15 mA) | |
| Forward Voltage (Maximum @ VBE(on), IC = 500 mA, IB = 50 mA) | |
| Frequency | |
| Junction Temperature | |
| Lead Style | |
| Leakage Current (Maximum @ ICBO, VCB = 60 V, IE = 0) | |
| Leakage Current (Maximum @ IEBO, VEB = 3.0 V, IC = 0) | |
| Mounting Type | |
| Noise Figure | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Power Dissipation | |
| Saturation Voltage (Maximum @ VCE(sat), IC = 150 mA, IB = 15 mA) | |
| Saturation Voltage (Maximum @ VCE(sat), IC = 500 mA, IB = 50 mA) | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Time (Maximum @ tOFF, VCC = 30 V, IC = 150 mA, IB 1 = IB 2 = 15 mA) | |
| Switching Time (Maximum @ tON, VCC = 30 V, IC = 150 mA, IB 1 = 15 mA, VBE(off) = 0.5 V) | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSP2222ATA from ON Semiconductor is a general-purpose NPN bipolar junction transistor (BJT) housed in a TO-92-3 package. This device is designed for amplification applications and offers a collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of up to 600mA.
Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 300 at 150mA and 10V, and a collector-emitter saturation voltage (VCE(sat)) of 1V maximum at 500mA and 50mA base current. The transistor has a current gain bandwidth product (fT) of 300MHz minimum at 20mA and 20V.
With a power dissipation rating of 625mW and a junction-to-ambient thermal resistance of 200°C/W, the KSP2222ATA is suitable for various electronic circuits. It is mounted via through-hole method. The device operates at junction temperatures up to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the KSP2222ATA is 40V.
The KSP2222ATA can handle a maximum continuous collector current (IC) of 600mA.
The junction temperature (TJ) for the KSP2222ATA can operate up to 150°C.
The power dissipation (PD) for the KSP2222ATA is 625mW.
The KSP2222ATA is available in a TO-92-3 package.
The KSP2222ATA is designed for through-hole mounting.
The DC current gain (hFE) of the KSP2222ATA is a minimum of 100 at 150mA and 10V.