| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSP13TA from ON Semiconductor is an NPN Epitaxial Silicon Darlington Transistor. This component is designed for applications requiring high current gain, with a minimum DC current gain (hFE) of 10000 at 100mA collector current and 5V collector-emitter voltage. It can handle a maximum collector current of 500mA and a maximum collector power dissipation of 625mW.
The transistor has a collector-emitter breakdown voltage (BVCES) of 30V and a collector-emitter saturation voltage (VCE(sat)) of 1.5V maximum at 100µA base current and 100mA collector current. The base-emitter on-voltage (VBE(on)) is a maximum of 2.0V at 100mA collector current and 5V collector-emitter voltage. The current gain bandwidth product (fT) is 125MHz.
Packaged in a TO-92-3 (TO-226-3, TO-226AA) through-hole configuration, the KSP13TA is suitable for various electronic circuits. It operates within a junction temperature range of -55°C to 150°C. The device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCES) for the KSP13TA is 30V.
The KSP13TA transistor has a maximum collector current of 500mA.
The KSP13TA has a power dissipation rating of 625mW.
The operating temperature range for the KSP13TA is -55°C to 150°C.
The KSP13TA has a minimum DC current gain (hFE) of 10000 at 100mA collector current and 5V collector-emitter voltage.
The KSP13TA transistor is supplied in a TO-92-3 package.