| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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118,147 pcs
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118147 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSP10TA from ON Semiconductor is an NPN epitaxial silicon transistor suitable for VHF/UHF applications. It offers a collector-emitter breakdown voltage of 25V and a collector-base breakdown voltage of 30V. The device has a maximum power dissipation of 350mW at 25°C ambient temperature and a junction temperature up to 150°C.
Key electrical characteristics include a DC current gain (hFE) of 60 minimum at 4mA and 10V, a current gain bandwidth product (fT) of 650MHz at 4mA and 10V, and a collector-emitter saturation voltage of 0.5V maximum. The transistor is housed in a TO-92-3 package, designed for through-hole mounting.
This transistor is Pb-free, Halogen-free, BFR-free, and RoHS compliant, making it suitable for environmentally conscious designs. Its robust specifications and reliable performance make it a suitable choice for various RF circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage for the KSP10TA is 25V.
The transition frequency (fT) of the KSP10TA is 650MHz.
The maximum power dissipation of the KSP10TA at 25°C ambient temperature is 350mW.
The operating junction temperature for the KSP10TA is up to 150°C.
The KSP10TA is supplied in a TO-92-3 package.
Yes, the KSP10TA is RoHS3 compliant.