| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
118,935 pcs
|
118935 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Halogen Free | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Voltage |
The KSP10BU is an NPN Epitaxial Silicon Transistor manufactured by On Semiconductor, suitable for VHF/UHF applications. It features a collector-emitter voltage of 25V and a collector-base voltage of 30V.
Key electrical characteristics include a minimum DC current gain (hFE) of 60 at 4mA and 10V, a collector-emitter saturation voltage (VCE(sat)) of 0.5V maximum, and a base-emitter on-voltage (VBE(on)) of 0.95V maximum at 4mA and 10V. The current gain bandwidth product (fT) is 650MHz minimum at 4mA and 10V.
This transistor has a maximum power dissipation of 350mW at 25°C ambient temperature, derating to 2.8mW/°C above 25°C. When measured at case temperature, the power dissipation is 1.0W at 25°C, derating to 8.0mW/°C. The junction temperature is rated up to 150°C, with storage temperatures ranging from -55°C to 150°C.
The KSP10BU is supplied in a TO-92-3 package, designed for through-hole mounting. It is RoHS3 compliant, Halogen Free, and Pb-Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (BVCEO) is 25V.
The minimum DC current gain (hFE) is 60 at 4mA collector current and 10V collector-emitter voltage.
The current gain bandwidth product (fT) is 650MHz minimum at 4mA collector current and 10V collector-emitter voltage.
The KSP10BU is supplied in a TO-92-3 package.
The junction temperature (TJ) can reach up to 150°C, and the storage temperature ranges from -55°C to 150°C.
Yes, the KSP10BU is RoHS3 Compliant.