KSP10BU The KSP10BU is an NPN Epitaxial Silicon Transistor from On Semiconductor designed for RF applications. It offers a 650MHz current gain bandwidth product and operates at 25V.
Mfr Part #:

KSP10BU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The KSP10BU is an NPN Epitaxial Silicon Transistor from On Semiconductor designed for RF applications. It offers a 650MHz current gain bandwidth product and operates at 25V.
✓ Total Stock: 118,935 pcs
$ Price Range: $0.99

KSP10BU Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
118,935 pcs
118935 pcs On Request 1 On Request On Request 20+ On Request On Request

KSP10BU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Voltage

KSP10BU Description

Short technical summary and product information.

The KSP10BU is an NPN Epitaxial Silicon Transistor manufactured by On Semiconductor, suitable for VHF/UHF applications. It features a collector-emitter voltage of 25V and a collector-base voltage of 30V.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 60 at 4mA and 10V, a collector-emitter saturation voltage (VCE(sat)) of 0.5V maximum, and a base-emitter on-voltage (VBE(on)) of 0.95V maximum at 4mA and 10V. The current gain bandwidth product (fT) is 650MHz minimum at 4mA and 10V.

 

This transistor has a maximum power dissipation of 350mW at 25°C ambient temperature, derating to 2.8mW/°C above 25°C. When measured at case temperature, the power dissipation is 1.0W at 25°C, derating to 8.0mW/°C. The junction temperature is rated up to 150°C, with storage temperatures ranging from -55°C to 150°C.

 

The KSP10BU is supplied in a TO-92-3 package, designed for through-hole mounting. It is RoHS3 compliant, Halogen Free, and Pb-Free.

KSP10BU Quick Information

Product Type: NPN Epitaxial Silicon Transistor
Canonical Name: KSP10BU NPN Epitaxial Silicon Transistor
Subcategory: Bipolar (BJT) - RF

KSP10BU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSP10BU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSP10BU Features

  • NPN Epitaxial Silicon Transistor for RF.
  • 25V Collector-Emitter Voltage rating.
  • 650MHz Current Gain Bandwidth Product.
  • TO-92-3 through-hole package.
  • Pb-Free and Halogen Free.

KSP10BU Applications

  • Ideal for RF signal amplification
  • Suitable for high-frequency switching
  • Used in RF communication circuits
  • Applicable in low-noise RF applications

KSP10BU FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the KSP10BU?

The collector-emitter breakdown voltage (BVCEO) is 25V.

What is the minimum DC current gain (hFE) of the KSP10BU?

The minimum DC current gain (hFE) is 60 at 4mA collector current and 10V collector-emitter voltage.

What is the current gain bandwidth product (fT) for the KSP10BU?

The current gain bandwidth product (fT) is 650MHz minimum at 4mA collector current and 10V collector-emitter voltage.

What is the package type for the KSP10BU transistor?

The KSP10BU is supplied in a TO-92-3 package.

What is the operating temperature range for the KSP10BU?

The junction temperature (TJ) can reach up to 150°C, and the storage temperature ranges from -55°C to 150°C.

Is the KSP10BU RoHS compliant?

Yes, the KSP10BU is RoHS3 Compliant.

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