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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8,960 pcs
|
8960 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSP06BU from ON Semiconductor is a single NPN bipolar junction transistor (BJT) housed in a TO-92-3 package. This device is suitable for through-hole mounting and offers a maximum collector-emitter voltage of 80V and a continuous collector current of up to 500mA.
With a DC current gain (hFE) of at least 50 at 100mA and 1V, and a transition frequency of 100MHz, the KSP06BU is designed for various switching and amplification tasks. It operates at a maximum junction temperature of 150°C and can dissipate up to 625mW of power.
The transistor type is NPN, and its saturation voltage (Vce) is a maximum of 250mV at 10mA collector current and 100mA base current. The RoHS status is reported as RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the KSP06BU transistor is 80V.
The KSP06BU has a continuous collector current rating of 500mA.
The DC current gain (hFE) of the KSP06BU is a minimum of 50 at 100mA collector current and 1V collector-emitter voltage.
The KSP06BU transistor operates at a maximum junction temperature of 150°C.
The KSP06BU transistor is supplied in a TO-92-3 package.