| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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78,100 pcs
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78100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor KSH42CTF is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It offers a collector-emitter breakdown voltage of 100V and can handle a maximum collector current of 6A. The transistor has a maximum power dissipation of 1.75W and a transition frequency of 3MHz.
This device is housed in a surface-mount TO-252-3, DPAK (2 Leads + Tab), SC-63 package, making it convenient for automated assembly processes. The operating temperature range extends up to 150°C (TJ), ensuring reliability in demanding environments. With a minimum DC current gain (hFE) of 15 at 3A and 4V, the KSH42CTF provides adequate amplification for many circuits. The saturation voltage (Vce Sat) is a maximum of 1.5V at 600mA collector current and 6A base current, and the collector cutoff current is a maximum of 50μA.
Key electrical characteristics include a minimum DC current gain of 15 and a transition frequency of 3MHz. The KSH42CTF is designed for applications requiring a robust PNP transistor in a compact surface-mount package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage for the KSH42CTF is 100V.
The maximum continuous collector current for the KSH42CTF is 6A.
The maximum power dissipation for the KSH42CTF is 1.75W.
The minimum DC current gain (hFE) for the KSH42CTF is 15 at Ic=3A and Vce=4V.
The operating temperature range for the KSH42CTF is up to 150°C (TJ).
The KSH42CTF is available in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package.