| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSH122 is an NPN Silicon Darlington Transistor manufactured by ON Semiconductor. This component is designed for applications requiring high current gain, featuring a DC current gain of up to 1000. It can handle a collector-emitter voltage of up to 100V and a continuous collector current of 8A.
The transistor is available in a D-PAK surface mount package, suitable for space-constrained designs. Its electrical characteristics include a collector-emitter saturation voltage of 2V at 4A and a base-emitter on voltage of 2.8V at 4A. The device also has a built-in damper diode between the collector and emitter.
Key electrical parameters include a collector-base voltage of 100V and an emitter-base voltage of 5V. The maximum junction temperature is 150°C, with a storage temperature range of -65°C to 150°C. The collector dissipation is rated at 20W at 25°C case temperature and 1.75W at 25°C ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the KSH122 is 100V.
The KSH122 has a continuous DC collector current rating of 8A.
The typical DC current gain (hFE) of the KSH122 at 4A is 1000.
The KSH122 is available in a D-PAK package for surface mount applications.
The maximum junction temperature for the KSH122 is 150°C.