KSE800STU The ON Semiconductor KSE800STU is an NPN Epitaxial Silicon Darlington Transistor. It offers a 60V collector-emitter voltage and a 4A collector current.
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KSE800STU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor KSE800STU is an NPN Epitaxial Silicon Darlington Transistor. It offers a 60V collector-emitter voltage and a 4A collector current.
Total Stock: 9,004 pcs
$ Price Range: $0.99

KSE800STU Available from 1 distributor

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KSE800STU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Emitter Breakdown Voltage
Current
Current Gain (Minimum @ VCE = 3 V, IC = 1.5 A)
Current Gain (Minimum @ VCE = 3 V, IC = 4 A)
DC Current Gain (hFE) (Min) @ Ic, Vce
Forward Voltage (Typical @ VCE = 3 V, IC = 1.5 A)
Forward Voltage (Typical @ VCE = 3 V, IC = 4 A)
Junction Temperature
Leakage Current (Maximum @ VBE = 5 V, IC = 0)
Leakage Current (Maximum @ VCB = Rated BVCEO, IE = 0, TC = 100 °C)
Leakage Current (Maximum @ VCE = 60 V, IB = 0)
Mounting Type
Operating Temperature
Power
Power Dissipation
Saturation Voltage (Maximum @ IC = -1.5 A, IB = -30 mA)
Saturation Voltage (Maximum @ IC = 4 A, IB = 40 mA)
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

KSE800STU Description

Short technical summary and product information.

The KSE800STU from ON Semiconductor is an NPN Epitaxial Silicon Darlington Transistor designed for various electronic applications. It features monolithic construction with built-in base-emitter resistors, providing a high DC current gain (hFE) of 750 minimum at 1.5A and 3V.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 4A. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 2.5V at 1.5A and 30mA, and 3V at 4A and 40mA. The transistor operates at a junction temperature up to 150°C.

 

This device is housed in a TO-126-3 package and is suitable for through-hole mounting. It is also noted as being Pb-Free. The KSE800STU is a complement to the KSE700 transistor.

KSE800STU Quick Information

Product Type: NPN Darlington Transistor
Canonical Name: KSE800STU NPN Epitaxial Silicon Darlington Transistor
Subcategory: Bipolar (BJT) - Single

KSE800STU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

KSE800STU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSE800STU Features

  • NPN Epitaxial Silicon Darlington Transistor
  • 60V Collector-Emitter Voltage (VCEO)
  • 4A Continuous Collector Current (IC)
  • High DC Current Gain (hFE) of 750 (Min.)
  • TO-126-3 Package for Through-Hole Mounting

KSE800STU Applications

  • Used in power switching circuits
  • Suitable for high-current amplification
  • Ideal for relay driver applications
  • Applicable in motor control modules

KSE800STU FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the KSE800STU?

The maximum collector-emitter voltage (VCEO) for the KSE800STU is 60V.

What is the continuous collector current rating of the KSE800STU?

The KSE800STU has a continuous collector current (IC) rating of 4A.

What is the minimum DC current gain (hFE) of the KSE800STU at 1.5A?

The minimum DC current gain (hFE) for the KSE800STU is 750 at 1.5A and 3V.

What is the package type for the KSE800STU transistor?

The KSE800STU is supplied in a TO-126-3 package.

What is the operating temperature range for the KSE800STU?

The KSE800STU can operate at a junction temperature up to 150°C.

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