KSE45H8TU The On Semiconductor KSE45H8TU is a PNP bipolar transistor with a 60V collector-emitter breakdown voltage and a maximum collector current of 10A. It is housed in a TO-220-3 package.
Mfr Part #:

KSE45H8TU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor KSE45H8TU is a PNP bipolar transistor with a 60V collector-emitter breakdown voltage and a maximum collector current of 10A. It is housed in a TO-220-3 package.
Total Stock: 3,171 pcs
$ Price Range: $0.99

KSE45H8TU Available from 2 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,960 pcs
1960 pcs On Request 1 On Request On Request 10+ On Request On Request
Non-Authorised Inventory information
1,211 pcs
1211 pcs On Request 1 On Request On Request On Request On Request On Request

KSE45H8TU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

KSE45H8TU Description

Short technical summary and product information.

The KSE45H8TU from On Semiconductor is a single PNP bipolar junction transistor designed for various electronic applications. It features a maximum collector-emitter breakdown voltage of 60V and can handle a continuous collector current of up to 10A. The transistor has a maximum power dissipation of 1.67W and a transition frequency of 40MHz.

 

This device is suitable for through-hole mounting and comes in a TO-220-3 package. The operating temperature range is up to 150°C (TJ). Key electrical characteristics include a minimum DC current gain (hFE) of 60 at 2A and 1V, and a saturation voltage (Vce Sat) of 1V maximum at 400mA and 8A. The collector cutoff current is a maximum of 10µA.

 

The KSE45H8TU is specified with RoHS3 compliance and an MSL 1 rating. Its through-hole mounting makes it a versatile component for board-level designs requiring robust power handling and switching capabilities.

KSE45H8TU Quick Information

Product Type: PNP Bipolar Transistor
Canonical Name: KSE45H8TU PNP Bipolar Transistor
Subcategory: Bipolar (BJT) - Single

KSE45H8TU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSE45H8TU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSE45H8TU Features

  • 60V collector-emitter breakdown voltage.
  • 10A maximum collector current.
  • 1.67W maximum power dissipation.
  • 40MHz transition frequency.
  • TO-220-3 package for through-hole mounting.

KSE45H8TU Applications

  • Used in power switching circuits
  • Suitable for motor control applications
  • Ideal for high-current power supplies
  • Applicable in amplifier circuits

KSE45H8TU FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector current for the KSE45H8TU?

The maximum collector current for the KSE45H8TU is 10A.

What is the collector-emitter breakdown voltage of the KSE45H8TU?

The collector-emitter breakdown voltage of the KSE45H8TU is 60V.

What is the maximum power dissipation of the KSE45H8TU transistor?

The maximum power dissipation for the KSE45H8TU is 1.67W.

What is the operating temperature range for the KSE45H8TU?

The operating temperature range for the KSE45H8TU is up to 150°C (TJ).

What package type is the KSE45H8TU available in?

The KSE45H8TU is available in a TO-220-3 package.

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