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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,960 pcs
|
1960 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
|
1,211 pcs
|
1211 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSE45H8TU from On Semiconductor is a single PNP bipolar junction transistor designed for various electronic applications. It features a maximum collector-emitter breakdown voltage of 60V and can handle a continuous collector current of up to 10A. The transistor has a maximum power dissipation of 1.67W and a transition frequency of 40MHz.
This device is suitable for through-hole mounting and comes in a TO-220-3 package. The operating temperature range is up to 150°C (TJ). Key electrical characteristics include a minimum DC current gain (hFE) of 60 at 2A and 1V, and a saturation voltage (Vce Sat) of 1V maximum at 400mA and 8A. The collector cutoff current is a maximum of 10µA.
The KSE45H8TU is specified with RoHS3 compliance and an MSL 1 rating. Its through-hole mounting makes it a versatile component for board-level designs requiring robust power handling and switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the KSE45H8TU is 10A.
The collector-emitter breakdown voltage of the KSE45H8TU is 60V.
The maximum power dissipation for the KSE45H8TU is 1.67W.
The operating temperature range for the KSE45H8TU is up to 150°C (TJ).
The KSE45H8TU is available in a TO-220-3 package.