| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| SVHC Present |
The KSE350 is a PNP Epitaxial Silicon Transistor manufactured by On Semiconductor. This component is designed for through-hole mounting and comes in a TO-126 package.
Key electrical specifications include a maximum Collector Base Voltage of -300V and a maximum Collector Emitter Voltage of 300V. The maximum Collector Current is rated at -500mA, and the Emitter Base Voltage is -5V. It offers a maximum power dissipation of 20W.
Operating within a temperature range of -65°C to 150°C, the KSE350 is suitable for various electronic applications requiring a reliable PNP transistor. Its through-hole mounting type facilitates easy integration into circuit boards.
This transistor is identified by its 3 terminals and is part of the broader category of discrete semiconductor products, specifically single bipolar junction transistors.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector emitter voltage for the KSE350 is 300V.
The maximum collector current for the KSE350 is -500mA.
The maximum power dissipation for the KSE350 is 20W.
The KSE350 operates from -65°C to 150°C.
The KSE350 is available in the TO-126 package.
The KSE350 is designed for through-hole mounting.
