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KSE13003TH1ATU The KSE13003TH1ATU is an NPN bipolar junction transistor from ON Semiconductor. It features a 400V collector-emitter breakdown voltage and a 1.5A collector current.
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KSE13003TH1ATU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The KSE13003TH1ATU is an NPN bipolar junction transistor from ON Semiconductor. It features a 400V collector-emitter breakdown voltage and a 1.5A collector current.
✓ Total Stock: 2,935 pcs
$ Price Range: $0.99

KSE13003TH1ATU Available from 1 distributor

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2,935 pcs
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KSE13003TH1ATU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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KSE13003TH1ATU Description

Short technical summary and product information.

The KSE13003TH1ATU is a single NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for through-hole mounting and comes in a TO-220-3 package.

 

Key electrical specifications include a maximum collector-emitter breakdown voltage of 400V and a maximum collector current of 1.5A. The device has a maximum power dissipation of 20W and a minimum DC current gain (hFE) of 9 at 500mA and 2V. The saturation voltage (Vce Sat) is a maximum of 3V at 500mA and 1.5A, with a transition frequency of 4MHz.

 

This transistor operates at a maximum junction temperature of 150°C. Its through-hole mounting type makes it suitable for various electronic circuit designs where robust component placement is required.

 

Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are not verified by documentation.

KSE13003TH1ATU Quick Information

Product Type: Bipolar Junction Transistor
Canonical Name: KSE13003TH1ATU NPN Bipolar Junction Transistor
Subcategory: Single

KSE13003TH1ATU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSE13003TH1ATU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSE13003TH1ATU Features

  • NPN bipolar junction transistor.
  • 400V collector-emitter breakdown voltage.
  • 1.5A maximum collector current.
  • 20W maximum power dissipation.
  • Through-hole TO-220-3 package.

KSE13003TH1ATU Applications

  • Suitable for general switching applications.
  • Used in power supply circuits.
  • Applicable for linear amplification.
  • Designed for through-hole mounting.

KSE13003TH1ATU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the KSE13003TH1ATU?

The maximum collector-emitter breakdown voltage is 400V.

What is the maximum continuous collector current?

The maximum continuous collector current is 1.5A.

What is the power dissipation rating?

The maximum power dissipation is 20W.

What is the minimum DC current gain (hFE)?

The minimum DC current gain (hFE) is 9 at 500mA and 2V.

What is the maximum junction operating temperature?

The maximum junction operating temperature is 150°C.

What type of transistor is the KSE13003TH1ATU?

It is an NPN bipolar junction transistor.

What package type is used for this transistor?

The transistor is supplied in a TO-220-3 package.

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