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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,200 pcs
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7200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSE13003H1ASTU from On Semiconductor is a single NPN bipolar junction transistor (BJT) suitable for various electronic applications. This component is housed in a TO-126-3 package, designed for through-hole mounting.
Key electrical characteristics include a maximum voltage rating of 400V and a continuous current rating of 1.5A. It offers a power dissipation of 20W and operates at frequencies up to 4MHz. The transistor exhibits a minimum DC current gain (hFE) of 9 at 500mA and 2V, with a Vce saturation of 3V at 500mA and 1.5A.
With an operating temperature range up to 150°C (TJ), this transistor is suitable for applications requiring moderate power handling. The RoHS status is listed as RoHS3 Compliant, MSL 1 Unlimited, and REACH Unaffected, though these compliance details are unverified.
This component is ideal for general-purpose amplification and switching applications where its voltage and current capabilities are beneficial. The through-hole package facilitates easy integration into circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The KSE13003H1ASTU transistor has a voltage rating of 400V.
The KSE13003H1ASTU transistor has a current rating of 1.5A.
The KSE13003H1ASTU is an NPN silicon transistor.
The KSE13003H1ASTU is supplied in a TO-126-3 package.
The KSE13003H1ASTU is designed for through-hole mounting.
The KSE13003H1ASTU can operate at a maximum junction temperature of 150°C.