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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,981 pcs
|
5981 pcs | On Request | 1 | On Request | On Request | 2015 | On Request | On Request | |
|
155 pcs
|
155 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Base Current | |
| Collector Current (Pulse) | |
| Collector Cut-Off Current | |
| Collector-Base Breakdown Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cut-off Current | |
| Emitter-Base Breakdown Voltage | |
| Frequency | |
| IC (Maximum) | |
| Junction and Storage Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| PD (Maximum @ Tc=25 °C) | |
| Pd (Maximum @ Ta=25 °C) | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| VCE(sat) (Maximum @ IC = 2 A, IB = 0.2 A) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| fT (Typical @ VCE = 5 V, IE = 0.1 A) | |
| hFE (Minimum/Typical @ VCE = 2 V, IC = 20 mA) | |
| hFE (Minimum/Typical/Maximum @ VCE = 2 V, IC = 1 A) | |
| hFE Classification (@ hFE 2) |
The KSD882YSTU is an NPN Epitaxial Silicon Transistor manufactured by ON Semiconductor. This component is designed for low-speed switching applications and serves as a complement to the KSB772. It features a collector-emitter voltage of 30V and a continuous collector current of 3A.
The transistor is housed in a TO-126-3 package, suitable for through-hole mounting. Key electrical characteristics include a DC current gain (hFE) ranging from 60 to 400 depending on the test conditions, a collector-emitter saturation voltage (Vce(sat)) of up to 0.5V at 2A/0.2A, and a current gain bandwidth product (fT) of 90MHz.
Absolute maximum ratings include a collector-base voltage of 40V, an emitter-base voltage of 5V, and a total device dissipation of 1W at 25°C ambient temperature. The operating temperature range is from -55°C to +150°C.
This device is noted as discontinued and not recommended for new designs. Please consult with your ON Semiconductor representative for alternative solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (BVCEO) for the KSD882YSTU is 30V.
The maximum continuous collector current (IC) for the KSD882YSTU is 3A.
The KSD882YSTU is supplied in a TO-126-3 package.
The operating temperature range for the KSD882YSTU is -55°C to +150°C.
The minimum DC current gain (hFE) of the KSD882YSTU at 1A and 2V is 60, with a typical value of 160 and a maximum of 400.
The typical current gain bandwidth product (fT) for the KSD882YSTU is 90MHz.