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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (Minimum/Maximum) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature (Minimum/Maximum) | |
| Power | |
| Reverse Voltage (Maximum) | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSD880YTU from ON Semiconductor is an NPN bipolar junction transistor (BJT) suitable for various electronic circuits. It offers a maximum collector-emitter voltage of 60V and a maximum continuous collector current of 3A. The transistor has a power dissipation rating of 30W and a gain bandwidth product of 3MHz.
This component is housed in a TO-220-3 package, designed for through-hole mounting. It operates within a temperature range of -55°C to +150°C. The DC current gain (hFE) is a minimum of 100 at 500mA collector current and 5V Vce, with a maximum of 300.
Key electrical characteristics include a collector-emitter saturation voltage of 1V maximum at 3A collector current and 300mA base current. The emitter-base voltage is rated at 7V maximum. This transistor is suitable for applications requiring moderate power handling and switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The KSD880YTU has a maximum collector-emitter voltage of 60V.
The maximum continuous collector current for the KSD880YTU is 3A.
The KSD880YTU has a maximum power dissipation of 30W.
The operating temperature range is -55°C to +150°C.
The KSD880YTU is supplied in a TO-220-3 package.
The KSD880YTU is designed for through-hole mounting.