KSD560YTU The On Semiconductor KSD560YTU is an NPN Darlington transistor designed for through-hole mounting. It offers a 100V collector-emitter breakdown voltage and a maximum collector current of 5A.
Mfr Part #:

KSD560YTU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor KSD560YTU is an NPN Darlington transistor designed for through-hole mounting. It offers a 100V collector-emitter breakdown voltage and a maximum collector current of 5A.
Total Stock: 2,730 pcs
$ Price Range: $0.99

KSD560YTU Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
730 pcs
730 pcs On Request 1 On Request On Request On Request On Request On Request

KSD560YTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

KSD560YTU Description

Short technical summary and product information.

The On Semiconductor KSD560YTU is a single NPN Darlington bipolar transistor. It is designed for through-hole mounting and comes in a TO-220-3 package. This transistor features a collector-emitter breakdown voltage of 100V and can handle a maximum collector current of 5A. Its Vce saturation is a maximum of 1.5V at 3mA and 3A, with a minimum DC current gain (hFE) of 5000 at 3A and 2V. The maximum collector cutoff current (ICBO) is 1μA. The device has a maximum power dissipation of 1.5W and an operating temperature range up to 150°C (TJ). It is specified as RoHS3 Compliant, with an MSL of 1 Unlimited, and REACH Unaffected.

 

This component is suitable for various electronic applications requiring a high-gain NPN Darlington transistor. Its robust specifications make it a reliable choice for power switching and amplification circuits. The through-hole mounting and standard TO-220-3 package facilitate easy integration into existing PCB designs.

KSD560YTU Quick Information

Product Type: NPN Darlington Transistor
Canonical Name: On Semiconductor KSD560YTU NPN Darlington Transistor
Subcategory: Bipolar (BJT) - Single

KSD560YTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSD560YTU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSD560YTU Features

  • 100V collector-emitter breakdown voltage.
  • 5A maximum collector current rating.
  • High DC current gain of 5000.
  • Low Vce saturation of 1.5V.
  • TO-220-3 package for through-hole mounting.

KSD560YTU Applications

  • Suitable for power switching applications.
  • Used in amplification circuits.
  • General purpose high-gain applications.
  • Integration into through-hole designs.

KSD560YTU FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter breakdown voltage for the KSD560YTU?

The maximum collector-emitter breakdown voltage is 100V.

What is the maximum continuous collector current for this transistor?

The maximum continuous collector current is 5A.

What is the operating temperature range of the KSD560YTU?

The operating temperature range is up to 150°C (TJ).

What package type is the KSD560YTU supplied in?

The KSD560YTU is supplied in a TO-220-3 package.

How is the KSD560YTU mounted?

The KSD560YTU is designed for through-hole mounting.

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