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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
730 pcs
|
730 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The On Semiconductor KSD560YTU is a single NPN Darlington bipolar transistor. It is designed for through-hole mounting and comes in a TO-220-3 package. This transistor features a collector-emitter breakdown voltage of 100V and can handle a maximum collector current of 5A. Its Vce saturation is a maximum of 1.5V at 3mA and 3A, with a minimum DC current gain (hFE) of 5000 at 3A and 2V. The maximum collector cutoff current (ICBO) is 1μA. The device has a maximum power dissipation of 1.5W and an operating temperature range up to 150°C (TJ). It is specified as RoHS3 Compliant, with an MSL of 1 Unlimited, and REACH Unaffected.
This component is suitable for various electronic applications requiring a high-gain NPN Darlington transistor. Its robust specifications make it a reliable choice for power switching and amplification circuits. The through-hole mounting and standard TO-220-3 package facilitate easy integration into existing PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 100V.
The maximum continuous collector current is 5A.
The operating temperature range is up to 150°C (TJ).
The KSD560YTU is supplied in a TO-220-3 package.
The KSD560YTU is designed for through-hole mounting.