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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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34,990 pcs
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34990 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSD560RTU is an NPN Darlington bipolar junction transistor (BJT) manufactured by On Semiconductor. It is designed for applications requiring high current gain and switching capabilities.
Key electrical characteristics include a maximum collector-emitter voltage of 100V and a continuous collector current rating of 5A. The transistor exhibits a high DC current gain (hFE) of 2000 minimum at 3A and 2V, with a Vce saturation of 1.5V maximum at 3mA and 3A. It has a maximum power dissipation of 1.5W and an operating temperature range up to 150°C.
This component is packaged in a TO-220-3 configuration, designed for through-hole mounting. Its robust construction and electrical specifications make it suitable for various power switching and amplification circuits.
The KSD560RTU is RoHS3 compliant, has an MSL of 1 Unlimited, and is REACH unaffected. These compliance attributes are based on available database information and should be verified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage for the KSD560RTU is 100V.
The KSD560RTU can handle a maximum collector current of 5A.
The KSD560RTU transistor comes in a TO-220-3 package.
The KSD560RTU is designed for through-hole mounting.
The KSD560RTU can operate at temperatures up to 150°C.