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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSD560RTSTU from ON Semiconductor is a single NPN Darlington bipolar junction transistor (BJT). This component is designed for through-hole mounting and comes in a TO-220-3 package.
Key electrical specifications include a maximum collector-emitter voltage of 100V and a continuous collector current rating of 5A. The transistor exhibits a high DC current gain (hFE) of 2000 at 3A and 2V, with a Vce saturation of 1.5V at 3mA and 3A. It has a power dissipation rating of 1.5W.
The operating temperature range for this device is up to 150°C (TJ). The KSD560RTSTU is suitable for various power switching and amplification applications where high gain and moderate voltage/current handling are required. Its through-hole mounting makes it convenient for breadboarding and traditional PCB assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current for the KSD560RTSTU is 5A.
The KSD560RTSTU has a maximum collector-emitter voltage rating of 100V.
The KSD560RTSTU can operate at temperatures up to 150°C (TJ).
The KSD560RTSTU is designed for through-hole mounting.
The KSD560RTSTU comes in a TO-220-3 package.
