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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Base-Emitter On Voltage | |
| Collector - Emitter Saturation Voltage | |
| Collector Current (Maximum) | |
| Collector Cut-Off Current | |
| Collector Dissipation | |
| Collector Output Capacitance | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| Current - Collector Cutoff (Max) | |
| Current Gain - Bandwidth Product (Minimum/Maximum @ VCE = 5 V, IC = 0.5 A) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ Ic = 500 mA, Vce = 5 V) | |
| DC Current Gain (hFE) (Minimum @ VCE = -5 V, IC = -3 A) | |
| DC Current Gain (hFE) (Minimum/Maximum @ VCE=5 V, IC=0.5 A) | |
| Emitter Cut-off Current | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage | |
| Frequency | |
| Frequency - Transition | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Power - Max | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape and Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSD526YTU is an NPN epitaxial silicon transistor manufactured by onsemi. It is designed for power amplifier applications and features a collector-emitter voltage of 80V and a continuous collector current of up to 4A.
Key electrical characteristics include a DC current gain (hFE) ranging from 15 to 240 depending on the operating conditions, and a current gain-bandwidth product (fT) of 8MHz. The transistor has a maximum collector dissipation of 30W and a junction temperature rating of 150°C.
This device comes in a TO-220-3 package, designed for through-hole mounting. It is a Pb-free device, indicating compliance with environmental standards.
The KSD526YTU is a complement to the KSB596 transistor, offering design flexibility in complementary push-pull applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 80V.
The maximum continuous collector current is 4A.
The maximum power dissipation is 30W.
The operating temperature is up to 150°C.
The KSD526YTU is supplied in a TO-220-3 package.
The KSD526YTU is RoHS3 Compliant.