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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
31,200 pcs
|
31200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Base-Emitter On Voltage | |
| Collector - Emitter Saturation Voltage | |
| Collector Current (Maximum) | |
| Collector Cut-Off Current | |
| Collector Dissipation (Maximum) | |
| Collector Emitter Breakdown Voltage (Minimum/Maximum) | |
| Collector Output Capacitance | |
| Collector-Base Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| Current - Collector Cutoff (Max) | |
| Current Gain - Bandwidth Product (Minimum/Maximum @ VCE = 5 V, IC = 0.5 A) | |
| Current Gain Bandwidth Product (Typical) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ Ic = 500 mA, Vce = 5 V) | |
| DC Current Gain (hFE) (Minimum/Maximum @ VCE = 5 V, IC = 3 A) | |
| DC Current Gain (hFE) (Minimum/Maximum @ VCE=5 V, IC=0.5 A) | |
| Emitter Cut-off Current | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage | |
| Frequency | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSD526Y from On Semiconductor is an NPN epitaxial silicon transistor designed for power amplifier applications. It features a collector-emitter breakdown voltage of 80V and a maximum collector current of 4A. The transistor offers a power dissipation of 30W and a current gain-bandwidth product of 8MHz.
This device is housed in a TO-220-3 package, suitable for through-hole mounting. Its complement is the KSB596. The KSD526Y is also noted as a Pb-Free device.
Key electrical characteristics include a collector-emitter saturation voltage (VCE(sat)) of up to 1.5V at 3A and a base-emitter on-voltage (VBE(on)) of up to 1.5V at 3A. The DC current gain (hFE) is a minimum of 120 at 500mA and 5V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the KSD526Y is 80 V.
The maximum continuous collector current (IC) for the KSD526Y is 4 A.
The KSD526Y has a maximum power dissipation (PC) of 30 W.
The operating junction temperature (TJ) for the KSD526Y is 150 °C.
The KSD526Y is available in a TO-220-3 package.
The minimum DC current gain (hFE) for the KSD526Y at 500mA and 5V is 120.
The current gain-bandwidth product (fT) for the KSD526Y is 8 MHz.