KSD5041RTA The ON Semiconductor KSD5041RTA is an NPN epitaxial silicon transistor designed for AF output amplification. It features a 20V collector-emitter voltage and 5A collector current.
Mfr Part #:

KSD5041RTA

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor KSD5041RTA is an NPN epitaxial silicon transistor designed for AF output amplification. It features a 20V collector-emitter voltage and 5A collector current.
Total Stock: 2,245 pcs
$ Price Range: $0.99

KSD5041RTA Available from 1 distributor

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KSD5041RTA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Breakdown Voltage (Minimum @ IC=-1 mA, IB=0)
Breakdown Voltage (Minimum @ IE = -10 A, IC = 0)
Current
Current Gain (Minimum @ VCE = 2 V, IC = 2 A)
Current Gain (Minimum/Maximum @ VCE = 2 V, IC = 0.5 A)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Leakage Current (Maximum @ VCB = 10 V, IE = 0)
Leakage Current (Maximum @ VEB = 7 V, IC = 0)
Mounting Type
Operating Temperature
Operating Temperature - Maximum
Output Capacitance
Power
Power Dissipation (Maximum) @ TA=25°C
Saturation Voltage (Maximum @ IC = 3 A, IB = 0.1 A)
Storage Temperature
Supplier Device Package
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
frequency (Typical)

KSD5041RTA Description

Short technical summary and product information.

The ON Semiconductor KSD5041RTA is an NPN epitaxial silicon transistor with a collector-emitter voltage rating of 20V and a collector current capability of 5A. It is designed for applications such as AF output amplifiers for electronic flash units, offering low collector-emitter saturation voltage and high performance at low supply voltages.

 

The transistor is housed in a TO-92-3 package, suitable for through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 340 at 0.5A and 2V, a maximum collector-emitter saturation voltage of 1V at 3A and 0.1A, and a current gain bandwidth product (fT) of 150MHz at 50mA and 6V. The junction temperature is rated up to 150°C.

 

This device is Pb-Free, aligning with modern environmental standards. Its robust design and specifications make it suitable for various electronic circuits requiring reliable NPN transistor performance.

KSD5041RTA Quick Information

Product Type: NPN Transistor
Canonical Name: KSD5041 NPN Epitaxial Silicon Transistor
Subcategory: Bipolar (BJT) - Single

KSD5041RTA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSD5041RTA Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSD5041RTA Features

  • NPN epitaxial silicon transistor.
  • 20V collector-emitter voltage rating.
  • 5A maximum collector current.
  • Low collector-emitter saturation voltage.
  • TO-92-3 through-hole package.

KSD5041RTA Applications

  • Used in switching power supplies
  • Suitable for motor control circuits
  • Ideal for high-current amplification
  • Applicable in relay driver circuits

KSD5041RTA FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the KSD5041RTA?

The maximum collector-emitter voltage (VCEO) for the KSD5041RTA is 20V.

What is the maximum collector current of the KSD5041RTA transistor?

The KSD5041RTA can handle a maximum collector current (IC) of 5A.

What is the DC current gain (hFE) of the KSD5041RTA at 0.5A?

The minimum DC current gain (hFE) is 340 at a collector current of 0.5A and collector-emitter voltage of 2V.

What is the package type for the KSD5041RTA?

The KSD5041RTA is supplied in a TO-92-3 package.

What is the operating temperature range for the KSD5041RTA?

The maximum junction temperature (TJ) for the KSD5041RTA is 150°C.

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