| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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30,000 pcs
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30000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSD471ACYBU is an NPN epitaxial silicon transistor manufactured by ON Semiconductor. It is designed for audio frequency power amplifier applications and is complementary to the KSB1151.
Key electrical specifications include a collector-emitter voltage (VCEO) of 30V and a continuous collector current (IC) of 1A. The device offers a maximum power dissipation (PD) of 800mW and a typical gain bandwidth product (fT) of 130MHz. The DC current gain (hFE) ranges from 120 to 240 at 100mA and 1V.
This transistor is housed in a TO-92-3 package, suitable for through-hole mounting. It operates within a junction temperature range of -55°C to +150°C.
The KSD471ACYBU is suitable for various audio frequency amplification circuits where a robust NPN transistor is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the KSD471ACYBU is 30V.
The maximum continuous collector current (IC) for the KSD471ACYBU is 1A.
The KSD471ACYBU has a maximum power dissipation of 800mW.
The typical gain bandwidth product (fT) for the KSD471ACYBU is 130MHz.
The KSD471ACYBU can operate between -55°C and +150°C.
The KSD471ACYBU is supplied in a TO-92-3 package.