KSD471ACYBU The KSD471ACYBU is an NPN epitaxial silicon transistor from ON Semiconductor. It features a 30V collector-emitter voltage and 1A collector current.
Mfr Part #:

KSD471ACYBU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The KSD471ACYBU is an NPN epitaxial silicon transistor from ON Semiconductor. It features a 30V collector-emitter voltage and 1A collector current.
Total Stock: 30,000 pcs
$ Price Range: $0.99

KSD471ACYBU Available from 1 distributor

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KSD471ACYBU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base - Emitter Saturation Voltage
Collector - Emitter Saturation Voltage
Collector Current
Collector Cut-Off Current
Collector Power Dissipation
Collector-Base Breakdown Voltage
Collector-Base Voltage (Maximum)
Collector-Emitter Breakdown Voltage
Continuous Collector Current (Maximum)
Current
Current-Gain - Bandwidth Product
DC Current Gain (@ VCE = 1 V, IC = 100 mA)
DC Current Gain (Minimum/Maximum)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Breakdown Voltage
Emitter-Base Voltage (Maximum)
Frequency
Gain-Bandwidth Product (Typical)
Junction Temperature
Mounting Type
Operating Temperature
Operating Temperature (Minimum/Maximum)
Operating Voltage (Maximum)
Output Capacitance
Power
Power Dissipation (Maximum)
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

KSD471ACYBU Description

Short technical summary and product information.

The KSD471ACYBU is an NPN epitaxial silicon transistor manufactured by ON Semiconductor. It is designed for audio frequency power amplifier applications and is complementary to the KSB1151.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 30V and a continuous collector current (IC) of 1A. The device offers a maximum power dissipation (PD) of 800mW and a typical gain bandwidth product (fT) of 130MHz. The DC current gain (hFE) ranges from 120 to 240 at 100mA and 1V.

 

This transistor is housed in a TO-92-3 package, suitable for through-hole mounting. It operates within a junction temperature range of -55°C to +150°C.

 

The KSD471ACYBU is suitable for various audio frequency amplification circuits where a robust NPN transistor is required.

KSD471ACYBU Quick Information

Product Type: NPN Transistor
Series: Ksd471
Canonical Name: KSD471ACYBU NPN Epitaxial Silicon Transistor
Subcategory: Transistors

KSD471ACYBU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSD471ACYBU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSD471ACYBU Features

  • NPN epitaxial silicon transistor.
  • 30V collector-emitter voltage.
  • 1A continuous collector current.
  • 800mW maximum power dissipation.
  • TO-92-3 through-hole package.

KSD471ACYBU Applications

  • Used in switching circuits
  • Suitable for amplification applications
  • Ideal for low to medium power switching
  • Compatible with through-hole PCB mounting

KSD471ACYBU FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage of the KSD471ACYBU?

The collector-emitter voltage (VCEO) for the KSD471ACYBU is 30V.

What is the maximum continuous collector current for this transistor?

The maximum continuous collector current (IC) for the KSD471ACYBU is 1A.

What is the power dissipation rating of the KSD471ACYBU?

The KSD471ACYBU has a maximum power dissipation of 800mW.

What is the typical gain bandwidth product (fT) for the KSD471ACYBU?

The typical gain bandwidth product (fT) for the KSD471ACYBU is 130MHz.

What is the operating temperature range for the KSD471ACYBU?

The KSD471ACYBU can operate between -55°C and +150°C.

What package type is the KSD471ACYBU supplied in?

The KSD471ACYBU is supplied in a TO-92-3 package.

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