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KSD363YTU The On Semiconductor KSD363YTU is an NPN bipolar transistor designed for general-purpose applications. It features a 120V collector-emitter breakdown voltage and a 6A maximum collector current.
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KSD363YTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor KSD363YTU is an NPN bipolar transistor designed for general-purpose applications. It features a 120V collector-emitter breakdown voltage and a 6A maximum collector current.
✓ Total Stock: 255 pcs
$ Price Range: $0.99

KSD363YTU Available from 1 distributor

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✓ Non-Authorised
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255 pcs
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KSD363YTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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KSD363YTU Description

Short technical summary and product information.

The KSD363YTU from On Semiconductor is a single NPN bipolar junction transistor (BJT) housed in a TO-220-3 package. This component is designed for through-hole mounting and offers a collector-emitter breakdown voltage of 120V and a continuous collector current rating of 6A.

 

Key electrical specifications include a maximum power dissipation of 40W and a minimum DC current gain (hFE) of 120 at 1A and 5V. The saturation voltage (Vce(sat)) is a maximum of 1V at 100mA and 1A, and the transition frequency (fT) is 10MHz. The collector cutoff current (ICBO) is a maximum of 1mA.

 

This transistor operates at temperatures up to 150°C (TJ). It is supplied in a tube package. The KSD363YTU is suitable for various switching and amplification applications where its voltage and current capabilities are beneficial.

KSD363YTU Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: On Semiconductor KSD363YTU NPN Bipolar Transistor
Subcategory: Bipolar (BJT) - Single

KSD363YTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSD363YTU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSD363YTU Features

  • 120V collector-emitter breakdown voltage.
  • 6A maximum continuous collector current.
  • 40W maximum power dissipation.
  • TO-220-3 through-hole package.
  • 150°C maximum operating temperature.

KSD363YTU Applications

  • Used in high-voltage switching circuits
  • Suitable for power amplification applications
  • Ideal for electronic control modules
  • Designed for thermal stability in power circuits

KSD363YTU FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the KSD363YTU?

The maximum collector-emitter breakdown voltage is 120 V.

What is the maximum continuous collector current?

The maximum continuous collector current is 6 A.

What is the maximum power dissipation?

The maximum power dissipation is 40 W.

What is the operating temperature range?

The operating temperature range is up to 150°C (TJ).

What package type is the KSD363YTU supplied in?

The KSD363YTU is supplied in a TO-220-3 package.

How is the KSD363YTU mounted?

The KSD363YTU is mounted using the through-hole method.

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