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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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21,327 pcs
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21327 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current - Collector Cutoff (Max) | |
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| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The On Semiconductor KSD261CGTA is a single NPN bipolar junction transistor (BJT) housed in a TO-92-3 package. This component is designed for through-hole mounting, making it suitable for various electronic circuit applications. It offers a collector-emitter breakdown voltage of 20V and can handle a maximum collector current of 500mA. The transistor has a maximum power dissipation of 500mW and an operating temperature range up to 150°C (TJ). Its saturation voltage (Vce Sat) is a maximum of 400mV at 50mA collector current and 500mA base current, with a minimum DC current gain (hFE) of 200 at 100mA collector current and 1V Vce. The collector cutoff current (ICBO) is a maximum of 100nA.
This transistor is specified with a Moisture Sensitivity Level (MSL) of 1, indicating it has unlimited shelf life under standard conditions. The RoHS status is compliant, and REACH status is unaffected. The TO-226-3, TO-92-3 (TO-226AA) package with formed leads is standard for this device. Its specifications make it a reliable choice for general-purpose amplification and switching applications where through-hole mounting is preferred.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 20V.
The maximum collector current is 500mA.
The operating temperature range is up to 150°C (TJ).
The KSD261CGTA is supplied in a TO-92-3 package.
The KSD261CGTA is designed for through-hole mounting.