KSD261CGTA The On Semiconductor KSD261CGTA is an NPN bipolar junction transistor designed for through-hole mounting. It features a 20V collector-emitter breakdown voltage and a 500mA maximum collector current.
Mfr Part #:

KSD261CGTA

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor KSD261CGTA is an NPN bipolar junction transistor designed for through-hole mounting. It features a 20V collector-emitter breakdown voltage and a 500mA maximum collector current.
Total Stock: 21,327 pcs
$ Price Range: $0.99

KSD261CGTA Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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21,327 pcs
21327 pcs On Request 1 On Request On Request On Request On Request On Request

KSD261CGTA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Packages
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

KSD261CGTA Description

Short technical summary and product information.

The On Semiconductor KSD261CGTA is a single NPN bipolar junction transistor (BJT) housed in a TO-92-3 package. This component is designed for through-hole mounting, making it suitable for various electronic circuit applications. It offers a collector-emitter breakdown voltage of 20V and can handle a maximum collector current of 500mA. The transistor has a maximum power dissipation of 500mW and an operating temperature range up to 150°C (TJ). Its saturation voltage (Vce Sat) is a maximum of 400mV at 50mA collector current and 500mA base current, with a minimum DC current gain (hFE) of 200 at 100mA collector current and 1V Vce. The collector cutoff current (ICBO) is a maximum of 100nA.

 

This transistor is specified with a Moisture Sensitivity Level (MSL) of 1, indicating it has unlimited shelf life under standard conditions. The RoHS status is compliant, and REACH status is unaffected. The TO-226-3, TO-92-3 (TO-226AA) package with formed leads is standard for this device. Its specifications make it a reliable choice for general-purpose amplification and switching applications where through-hole mounting is preferred.

KSD261CGTA Quick Information

Product Type: NPN Transistor
Canonical Name: On Semiconductor KSD261CGTA NPN Transistor
Subcategory: Bipolar (BJT) - Single

KSD261CGTA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSD261CGTA Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSD261CGTA Features

  • NPN bipolar junction transistor.
  • 20V collector-emitter breakdown voltage.
  • 500mA maximum collector current.
  • TO-92-3 package for through-hole mounting.
  • Operates up to 150°C junction temperature.

KSD261CGTA Applications

  • Suitable for low-voltage switching applications.
  • Used in signal amplification circuits.
  • Ideal for general-purpose switching in electronic devices.
  • Applicable in power management and control circuits.

KSD261CGTA FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the KSD261CGTA?

The collector-emitter breakdown voltage is 20V.

What is the maximum collector current for this NPN transistor?

The maximum collector current is 500mA.

What is the operating temperature range of the KSD261CGTA?

The operating temperature range is up to 150°C (TJ).

What package type is the KSD261CGTA supplied in?

The KSD261CGTA is supplied in a TO-92-3 package.

How is the KSD261CGTA mounted?

The KSD261CGTA is designed for through-hole mounting.

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