| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,790 pcs
|
4790 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSD2012GTU is an NPN epitaxial silicon transistor manufactured by ON Semiconductor, suitable for low frequency power amplifier applications. It offers a collector-emitter breakdown voltage of 60V and can handle a continuous collector current of up to 3A.
Key electrical characteristics include a maximum collector power dissipation of 25W at 25°C case temperature. The transistor exhibits a typical DC current gain (hFE) of 100 at 0.5A collector current and a typical collector-emitter saturation voltage of 0.4V at 2A collector current and 0.2A base current.
This device is packaged in a TO-220F-3 (Full Pack) configuration, designed for through-hole mounting. The operating junction temperature range is from -55°C to 150°C. It is also noted as a Pb-Free device, indicating compliance with environmental standards.
The KSD2012GTU is complementary to the KSB1366 transistor, offering design flexibility in complementary push-pull stages.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage for the KSD2012GTU is 60V.
The KSD2012GTU can handle a maximum continuous collector current of 3A.
The KSD2012GTU has a maximum power dissipation rating of 25W.
The operating junction temperature range for the KSD2012GTU is -55°C to 150°C.
The KSD2012GTU is supplied in a TO-220F-3 Full Pack package.
The KSD2012GTU is designed for through-hole mounting.
The typical DC current gain (hFE) of the KSD2012GTU is 100 at 0.5A collector current.