KSD1691YSTU The KSD1691YSTU is an NPN transistor from On Semiconductor. It features a 60V collector-emitter breakdown voltage and a maximum collector current of 5A.
Mfr Part #:

KSD1691YSTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The KSD1691YSTU is an NPN transistor from On Semiconductor. It features a 60V collector-emitter breakdown voltage and a maximum collector current of 5A.
Total Stock: 60,585 pcs
$ Price Range: $0.99

KSD1691YSTU Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
60,585 pcs
60585 pcs On Request 1 On Request On Request 21+ On Request On Request

KSD1691YSTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Power - Max
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

KSD1691YSTU Description

Short technical summary and product information.

The KSD1691YSTU is a single NPN bipolar junction transistor (BJT) manufactured by On Semiconductor. It is designed for applications requiring a breakdown voltage of up to 60V and can handle a maximum continuous collector current of 5A. The transistor has a maximum power dissipation of 1.3W and a high DC current gain (hFE) of at least 160 at 2A collector current and 1V Vce.

 

This component is housed in a TO-126-3 package, suitable for through-hole mounting. The operating temperature range is specified up to 150°C (TJ). The Vce saturation voltage is a maximum of 300mV at 200mA base current and 2A collector current. The collector cutoff current (ICBO) is a maximum of 10µA.

 

Key electrical characteristics include a 60V collector-emitter breakdown voltage and a 5A maximum collector current. The high gain of 160 at 2A, 1V makes it suitable for amplification and switching applications. Its operating temperature capability of 150°C allows for use in moderately demanding thermal environments.

KSD1691YSTU Quick Information

Product Type: NPN Transistor
Canonical Name: KSD1691YSTU NPN Transistor
Subcategory: Bipolar (BJT) - Single

KSD1691YSTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSD1691YSTU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSD1691YSTU Features

  • 60V collector-emitter breakdown voltage.
  • 5A maximum collector current.
  • 1.3W maximum power dissipation.
  • High DC current gain (hFE) of 160.
  • TO-126-3 through-hole package.

KSD1691YSTU Applications

  • Suitable for power switching applications.
  • Used in general amplification circuits.
  • Ideal for voltage regulation circuits.
  • Applicable in DC-DC converters.

KSD1691YSTU FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum collector current for the KSD1691YSTU?

The maximum collector current (Ic) for the KSD1691YSTU is 5A.

What is the collector-emitter breakdown voltage of the KSD1691YSTU?

The collector-emitter breakdown voltage (Vceo) for the KSD1691YSTU is 60V.

What is the operating temperature range for the KSD1691YSTU transistor?

The KSD1691YSTU transistor can operate at temperatures up to 150°C (TJ).

What package type is the KSD1691YSTU available in?

The KSD1691YSTU is available in the TO-126-3 package.

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