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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
60,585 pcs
|
60585 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power - Max | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSD1691YSTU is a single NPN bipolar junction transistor (BJT) manufactured by On Semiconductor. It is designed for applications requiring a breakdown voltage of up to 60V and can handle a maximum continuous collector current of 5A. The transistor has a maximum power dissipation of 1.3W and a high DC current gain (hFE) of at least 160 at 2A collector current and 1V Vce.
This component is housed in a TO-126-3 package, suitable for through-hole mounting. The operating temperature range is specified up to 150°C (TJ). The Vce saturation voltage is a maximum of 300mV at 200mA base current and 2A collector current. The collector cutoff current (ICBO) is a maximum of 10µA.
Key electrical characteristics include a 60V collector-emitter breakdown voltage and a 5A maximum collector current. The high gain of 160 at 2A, 1V makes it suitable for amplification and switching applications. Its operating temperature capability of 150°C allows for use in moderately demanding thermal environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the KSD1691YSTU is 5A.
The collector-emitter breakdown voltage (Vceo) for the KSD1691YSTU is 60V.
The KSD1691YSTU transistor can operate at temperatures up to 150°C (TJ).
The KSD1691YSTU is available in the TO-126-3 package.