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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,100 pcs
|
6100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power - Max | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSD1691YS is a single NPN bipolar junction transistor manufactured by On Semiconductor. It features a collector-emitter breakdown voltage of 60V and can handle a maximum collector current of 5A. The transistor has a maximum power dissipation of 1.3W and a high DC current gain (hFE) of 160 at 2A and 1V.
Designed for through-hole mounting, the KSD1691YS is suitable for various electronic applications requiring a robust NPN transistor. Its operating temperature range extends up to 150°C (TJ), making it reliable in demanding environments. The package is TO-225AA, TO-126-3, with the supplier device package specified as TO-126-3.
This transistor exhibits a Vce saturation voltage of 300mV at 200mA and 2A, and a low collector cutoff current of 10µA (ICBO). It is RoHS3 compliant, indicating adherence to environmental standards for hazardous substances.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 60V.
The maximum collector current is 5A.
The maximum power dissipation is 1.3W.
The minimum DC current gain (hFE) is 160 at 2A and 1V.
The operating temperature is up to 150°C (TJ).
The KSD1691YS is an NPN transistor.
The KSD1691YS is mounted using the through-hole method.