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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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13,537 pcs
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13537 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSD1691GS from ON Semiconductor is a single NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It offers a maximum collector-emitter voltage of 60V and can handle a continuous collector current of up to 5A. The transistor has a power dissipation rating of 1.3W and a high DC current gain (hFE) of 200 at 2A and 1V.
This device features a Vce saturation voltage of 300mV maximum at 200mA base current and 2A collector current, ensuring efficient switching. It operates within a temperature range of -55°C to 150°C (TJ). The KSD1691GS is packaged in a TO-126-3 (TO-225AA) configuration, designed for through-hole mounting on printed circuit boards.
Its robust specifications make it suitable for various electronic circuits requiring reliable NPN transistor performance. The RoHS status is compliant, and it has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The KSD1691GS transistor has a maximum voltage rating of 60V.
The KSD1691GS transistor can handle a continuous current of 5A.
The KSD1691GS transistor has a power dissipation of 1.3W.
The KSD1691GS transistor operates at temperatures up to 150°C.
The KSD1691GS is supplied in a TO-126-3 package.
The KSD1691GS transistor is designed for through-hole mounting.