Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,961 pcs
|
8961 pcs | On Request | 1 | On Request | On Request | 0549+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (Minimum @ IC = 10 µA, IE = 0) | |
| Breakdown Voltage (Minimum @ IC=-1 mA, IB=0) | |
| Breakdown Voltage (Minimum @ IE = -10 A, IC = 0) | |
| Continuous Collector Current (Maximum) | |
| Current | |
| Current Gain (Minimum @ VCE = 2 V, IC = 0.1 A) | |
| Current Gain (Minimum @ VCE = 2 V, IC = 1.5 A) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Gain Bandwidth Product (Minimum @ VCE = 10 V, IC = 50 mA) | |
| Leakage Current (Maximum @ VBE = 4 V, IC = 0) | |
| Leakage Current (Maximum @ VCB = 20 V, IE = 0) | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Power Dissipation (Maximum) | |
| Power Dissipation (TA=25°C) | |
| Saturation Voltage (Maximum @ IC = 1.5 A, IB = 75 mA) | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Time (@ VCC = 12 V, VBE = 5 V IB 1 = -IB 2 = 25 mA IC = 0.5 A, RL = 25Ω) | |
| Switching Time (Unspecified condition) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSD1621TTF is an NPN epitaxial silicon transistor manufactured by On Semiconductor. It is designed for high current driver applications, featuring a low collector-emitter saturation voltage and large current capacity with a wide safe operating area (SOA).
Key electrical specifications include a collector-emitter breakdown voltage of 25V and a continuous collector current of up to 2A. The transistor boasts a DC current gain (hFE) of 200 minimum at 100mA and 2V, and a current gain bandwidth product (fT) of 150MHz at 50mA and 10V. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 0.4V at 1.5A collector current and 75mA base current.
This component is housed in a TO-243AA package, also known as SOT-89-3, suitable for surface mounting. The operating junction temperature is rated up to 150°C, with a storage temperature range of -55°C to +150°C. Its fast switching speed, with a typical fall time of 25ns, makes it suitable for various switching applications.
The KSD1621TTF is a complement to the KSB1121 transistor. Its robust design and specifications make it a reliable choice for power management and driver circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (BVCEO) for the KSD1621TTF is 25V.
The KSD1621TTF can handle a maximum continuous collector current of 2A.
The operating junction temperature (TJ) for the KSD1621TTF is up to 150°C.
The KSD1621TTF is supplied in a SOT-89-3 package, also known as TO-243AA.
The current gain bandwidth product (fT) is 150MHz at a test condition of VCE = 10V and IC = 50mA.