Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
77,967 pcs
|
77967 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,805 pcs
|
1805 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Emitter On Voltage (Minimum/Typical/Maximum @ IC = 50 mA, VCE = 2 V) | |
| Collector Current (DC) | |
| Collector Current (Pulse) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Saturation Voltage (Typical/Maximum @ Ic=1 A, Ib=50 mA) | |
| Collector-Emitter Voltage (VCEO) Max | |
| Continuous Collector Current | |
| Current | |
| Current Gain Bandwidth Product Ft (Minimum/Typical @ VCE = 2 V, IC = 100 mA) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain Hfe Max (Maximum @ IC = 100 mA, VCE = 2 V) | |
| DC Current Gain Hfe Max (Maximum) | |
| DC Current Gain Hfe Min (Minimum @ IC = 1 A, VCE = 2 V) | |
| DC Current Gain Hfe Min (Minimum @ IC = 100 mA, VCE = 2 V) | |
| Dc Collector/Base Gain Hfe Min | |
| Emitter-Base Voltage (VEBO) | |
| Fall Time (tf) | |
| Frequency | |
| Gain-Bandwidth Product (fT) | |
| Junction Temperature | |
| Lead Style | |
| Maximum power dissipation | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Pb-Free | |
| Power | |
| Power Dissipation (PD) | |
| Standard Package Qty | |
| Storage Temperature | |
| Storage Time (tstg) | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction-to-Ambient | |
| Total Device Dissipation | |
| Transistor Type | |
| Turn-On Time (ton) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSD1616AYTA from ON Semiconductor is an NPN epitaxial silicon transistor suitable for audio frequency power amplifier and medium speed switching applications. It offers a collector-emitter voltage of 60V and a continuous collector current of 1A.
Key electrical characteristics include a DC current gain (hFE) ranging from 135 to 400 at 100mA and 2V, and a gain bandwidth product (fT) of 160MHz at 100mA and 2V. The transistor also features a low collector-emitter saturation voltage of 0.30V maximum at 1A and 50mA base current, and a typical turn-on time of 0.07µs.
This device is housed in a TO-92-3 through-hole package, making it suitable for various PCB mounting requirements. It operates within a junction temperature range of -55°C to 150°C and has a total power dissipation of 0.75W.
The KSD1616AYTA is a Pb-Free device, indicating compliance with environmental regulations regarding hazardous substances.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the KSD1616AYTA is 60V.
The KSD1616AYTA has a continuous collector current rating of 1A.
The gain bandwidth product (fT) for the KSD1616AYTA is 160MHz at 100mA and 2V.
The KSD1616AYTA can operate within a temperature range of -55°C to 150°C.
The KSD1616AYTA is supplied in a TO-92-3 package.
The KSD1616AYTA is listed as RoHS3 Compliant.