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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Packages | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSD1616ALTA from On Semiconductor is a single NPN bipolar junction transistor (BJT) housed in a TO-92-3 package. This component is rated for a maximum collector-emitter breakdown voltage of 60V and can handle a continuous collector current of up to 1A.
Key electrical characteristics include a maximum Vce saturation of 300mV at 50mA collector current and a minimum DC current gain (hFE) of 300 at 100mA and 2V. The transistor has a transition frequency of 160MHz, making it suitable for various switching and amplification tasks.
With a maximum power dissipation of 750mW and an operating temperature range up to 150°C (TJ), the KSD1616ALTA is designed for reliable performance. The TO-226-3, TO-92-3 (TO-226AA) package with formed leads is suitable for through-hole mounting.
This transistor is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating it is suitable for a wide range of manufacturing environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 60V.
The maximum continuous collector current is 1A.
The operating temperature range is up to 150°C (TJ).
The KSD1616ALTA is supplied in a TO-92-3 package.
The KSD1616ALTA is designed for through-hole mounting.