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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
84,587 pcs
|
84587 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current Gain (Minimum @ VCE = 2 V, IC = 1 A) | |
| Current Gain (Minimum @ VCE = 2 V, IC = 100 mA) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum) | |
| Supplier Device Package | |
| Temperature | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Voltage - Maximum | |
| current (Maximum @ Note 1) | |
| current (Maximum @ VCB = 60 V, IE = 0) | |
| current (Maximum @ VEB = 6 V, IC = 0) | |
| frequency (Typical) | |
| temperature (Maximum) | |
| time (Typical @ VCC = 10 V, IC = 100 mA, IB 1 = −IB 2 = 10 mA, VBE(off) = −2 V ~ −3 V) | |
| time (Typical) | |
| voltage (Maximum @ @ Ib, Ic) | |
| voltage (Maximum @ IC = 100 /C 0109 A, IE = 0) | |
| voltage (Typical/Maximum @ IC = 1 A, IB = 50 mA) | |
| voltage (Typical/Maximum @ VCE = 2 V, IC = 50 mA) |
The ON Semiconductor KSD1616AGBU is an NPN epitaxial silicon transistor suitable for audio frequency power amplification and medium speed switching applications. It offers a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 1A.
Key electrical characteristics include a DC current gain (hFE) ranging from 81 to over 135 depending on the operating conditions, and a current gain bandwidth product (fT) of 160MHz. The transistor has a typical collector-emitter saturation voltage (VCEsat) of 0.15V at 1A collector current and 50mA base current.
Packaged in a TO-92-3 through-hole configuration, the KSD1616AGBU operates within a junction temperature range of -55°C to 150°C. It is also noted as a Pb-Free device, indicating compliance with environmental standards.
This transistor serves as a complement to the KSB1116/KSB1116A series, making it a versatile component for various electronic designs requiring amplification or switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the KSD1616AGBU is 60V.
The KSD1616AGBU can handle a maximum continuous collector current (IC) of 1A.
The current gain bandwidth product (fT) for the KSD1616AGBU is 160MHz.
The KSD1616AGBU is supplied in a TO-92-3 through-hole package.
The KSD1616AGBU has a storage temperature range of -55°C to 150°C.