| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8,000 pcs
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8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
44 pcs
|
44 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSD1588YTU is an NPN Epitaxial Silicon Transistor manufactured by onsemi, designed for low frequency power amplification and low speed switching applications. It offers a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) rating of 7A.
Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 3A and 1V, and a collector-emitter saturation voltage (VCE(sat)) of 500mV at 5A and 500mA base current. The transistor can handle a pulse collector current of up to 15A. It operates within a junction temperature range of -55°C to 150°C.
This device is supplied in a TO-220-3 Full Pack package, suitable for through-hole mounting. The KSD1588YTU is Pb-Free and RoHS3 compliant, making it suitable for various electronic designs requiring reliable NPN transistor performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the KSD1588YTU is 60V.
The KSD1588YTU has a maximum continuous collector current (IC) of 7A.
The KSD1588YTU comes in a TO-220-3 Full Pack package.
The KSD1588YTU operates within a junction temperature range of -55°C to 150°C.
The KSD1588YTU is RoHS3 Compliant.