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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,040 pcs
|
5040 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Base-Emitter On Voltage | |
| Collector Current | |
| Collector Cut-Off Current | |
| Collector Dissipation (TA = 25°C) | |
| Collector Dissipation (Tc=25°C) | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage (Minimum @ IC = 50 mA, IB = 0) | |
| Collector-Emitter Breakdown Voltage (Unspecified condition) | |
| Collector-Emitter Saturation Voltage (Maximum @ IB = 300 mA, IC = 3 A) | |
| Collector-Emitter Saturation Voltage (Maximum @ IC = -3 A, IB = -0.3 A) | |
| Collector-Emitter Voltage | |
| Current | |
| Current Gain Bandwidth Product (Typical @ VCE = 5 V, IC = 0.5 A) | |
| Current Gain Bandwidth Product (Unspecified condition) | |
| DC Current Gain (Minimum @ IC = -500 mA, VCE = -5 V) | |
| DC Current Gain (Minimum @ Vce=5 V, Ic=3 A) | |
| DC Current Gain (Minimum/Maximum @ VCE=5 V, IC=0.5 A) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cut-off Current | |
| Emitter-Base Voltage | |
| Fall Time | |
| Frequency | |
| Junction Temperature | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Storage Temperature | |
| Storage Time | |
| Supplier Device Package | |
| Transistor Type | |
| Turn On Time | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSD1221OTU is an NPN epitaxial silicon transistor designed for low-frequency power amplification. It features a maximum collector-emitter voltage of 60V and a continuous collector current of 3A, with a low collector-emitter saturation voltage of 1V at 3A/0.3A.
This transistor has a DC current gain (hFE) ranging from 60 to 300 at 5V/0.5A. The current gain bandwidth product (fT) is 3MHz at 5V/0.5A. It can dissipate up to 20W when the case temperature is 25°C, or 1W when the ambient temperature is 25°C.
The KSD1221OTU is housed in an I-PAK (TO-251-3 Short Leads, IPak, TO-251AA) package and is designed for through-hole mounting. Its operating junction temperature is rated up to 150°C.
This component is a complement to the KSB906 and is suitable for applications requiring low collector-emitter saturation voltage.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the KSD1221OTU is 60V.
The KSD1221OTU has a continuous collector current rating of 3A.
The power dissipation of the KSD1221OTU is 20W at a case temperature of 25°C.
The operating junction temperature for the KSD1221OTU is up to 150°C.
The KSD1221OTU is supplied in an I-PAK package, specifically TO-251-3 Short Leads, IPak, TO-251AA.
The minimum DC current gain (hFE) for the KSD1221OTU is 60 at 500mA collector current and 5V collector-emitter voltage.
The collector-emitter saturation voltage (Vce(sat)) for the KSD1221OTU is a maximum of 1V at 3A collector current and 300mA base current.