| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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70,000 pcs
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70000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSC945YBU is an NPN epitaxial silicon transistor manufactured by On Semiconductor. It is designed for applications such as audio frequency amplification and high-frequency oscillation.
Key electrical characteristics include a collector-emitter voltage of 50V and a maximum collector current of 150mA. The transistor offers a DC current gain (hFE) of 120 (min) at 1mA and 6V, and a typical current gain bandwidth product (fT) of 300MHz at 10mA and 6V. The collector-emitter saturation voltage (Vce(sat)) is a maximum of 300mV at 10mA and 100mA.
This device has a power dissipation rating of 250mW at 25°C and an operating junction temperature up to 150°C. It is packaged in a TO-92-3 through-hole package, making it suitable for standard PCB mounting.
The KSC945YBU is complementary to the KSA733 transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the KSC945YBU is 50V.
The KSC945YBU transistor has a maximum collector current of 150mA.
The power dissipation for the KSC945YBU is 250mW at 25°C.
The minimum DC current gain (hFE) for the KSC945YBU is 120 at 1mA collector current and 6V collector-emitter voltage.
The operating junction temperature (TJ) for the KSC945YBU is up to 150°C.
The KSC945YBU is supplied in a TO-92-3 package.