| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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256,247 pcs
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256247 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSC945CYTA from ON Semiconductor is an NPN epitaxial silicon transistor suitable for audio frequency amplifier and high-frequency oscillator applications. It offers a collector-emitter voltage of 50V and a maximum collector current of 150mA.
Key electrical characteristics include a DC current gain (hFE) of 120 (min) at 1mA and 6V, and a current gain bandwidth product (fT) of 300 MHz (typical) at 10mA and 6V. The collector-emitter saturation voltage (Vce Sat) is a maximum of 0.30V at 100mA and 10mA.
This transistor is housed in a TO-92-3 package with through-hole mounting. It operates at a junction temperature up to 150°C and has a power dissipation of 250mW. The KSC945CYTA is complementary to the KSA733.
It is designed for applications requiring amplification and oscillation in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage for the KSC945CYTA is 50V.
The maximum collector current for the KSC945CYTA is 150mA.
The typical gain bandwidth product (fT) for the KSC945CYTA is 300MHz.
The KSC945CYTA is available in a TO-92-3 package.
The operating temperature range for the KSC945CYTA is -55°C to 150°C (TJ).