| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
95,058 pcs
|
95058 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSC815YTA is a single NPN bipolar junction transistor (BJT) manufactured by onsemi. It is designed for general-purpose applications and offers a collector-emitter breakdown voltage of 45V and a maximum collector current of 200mA.
Key electrical characteristics include a minimum DC current gain (hFE) of 120 at 50mA and 1V, a Vce saturation of 400mV maximum at 15mA/150mA, and a transition frequency of 200MHz. The transistor operates at temperatures up to 150°C (TJ).
This component is supplied in a TO-92-3 package, suitable for through-hole mounting. The package type is TO-226-3, TO-92-3 (TO-226AA) with formed leads. It is available in cut tape packaging.
The KSC815YTA is a reliable choice for various electronic circuits requiring amplification or switching functions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 45V.
The maximum collector current is 200mA.
The transition frequency is 200MHz.
The minimum DC current gain (hFE) is 120 at 50mA and 1V.
The operating temperature is up to 150°C (TJ).
The KSC815YTA is supplied in a TO-92-3 package.