KSC5603DTU The KSC5603DTU is an NPN bipolar transistor from onsemi, rated for 800V and 3A. It is housed in a TO-220 package.
Mfr Part #:

KSC5603DTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The KSC5603DTU is an NPN bipolar transistor from onsemi, rated for 800V and 3A. It is housed in a TO-220 package.
Total Stock: 1,000 pcs
$ Price Range: $0.99

KSC5603DTU Available from 1 distributor

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KSC5603DTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current Rating (Maximum)
DC Current Gain (hFE) (Min) @ Ic, Vce
Element Configuration
Frequency
Mounting Style
Mounting Type
Operating Temperature
Operating Temperature (Minimum/Maximum)
Operating Voltage (Nominal/Maximum)
Power
Power Dissipation (Maximum)
Saturation Voltage (Typical)
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
hfe (Minimum)

KSC5603DTU Description

Short technical summary and product information.

The KSC5603DTU is a single-element NPN silicon bipolar transistor manufactured by onsemi. It features a high collector-emitter voltage rating of 800V and a continuous collector current rating of 3A, with a maximum power dissipation of 100W.

 

This transistor is designed for through-hole mounting and comes in a standard TO-220-3 package. Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 400mA and 3V, and a saturation voltage (Vce Sat) of 2.5V maximum at 1A and 200µA. The gain bandwidth product is 5MHz.

 

Operating temperature ranges from -65°C to 150°C. The component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

KSC5603DTU Quick Information

Product Type: Power Bipolar Transistor
Canonical Name: KSC5603DTU NPN Power Bipolar Transistor
Subcategory: Bipolar (BJT) - Single

KSC5603DTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSC5603DTU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSC5603DTU Features

  • 800V collector-emitter voltage rating.
  • 3A continuous collector current.
  • 100W maximum power dissipation.
  • NPN silicon bipolar transistor.
  • TO-220 through-hole package.

KSC5603DTU Applications

  • Suitable for high-voltage power switching
  • Used in RF amplification circuits
  • Ideal for high-voltage amplification applications
  • Designed for through-hole mounting in power modules

KSC5603DTU FAQs

6 frequently asked questions generated from this part’s specifications.
What is the KSC5603DTU?

The KSC5603DTU is an NPN silicon bipolar transistor manufactured by onsemi, designed for power applications.

What is the maximum collector-emitter voltage (VCEO) for the KSC5603DTU?

The maximum collector-emitter voltage (VCEO) for the KSC5603DTU is 800V.

What is the continuous collector current rating of the KSC5603DTU?

The KSC5603DTU has a continuous collector current rating of 3A.

What is the power dissipation of the KSC5603DTU?

The KSC5603DTU has a maximum power dissipation of 100W.

What package type is the KSC5603DTU supplied in?

The KSC5603DTU is supplied in a TO-220-3 package.

What is the operating temperature range for the KSC5603DTU?

The operating temperature range for the KSC5603DTU is -65°C to 150°C.

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