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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSC5603DTU is a single-element NPN silicon bipolar transistor manufactured by onsemi. It features a high collector-emitter voltage rating of 800V and a continuous collector current rating of 3A, with a maximum power dissipation of 100W.
This transistor is designed for through-hole mounting and comes in a standard TO-220-3 package. Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 400mA and 3V, and a saturation voltage (Vce Sat) of 2.5V maximum at 1A and 200µA. The gain bandwidth product is 5MHz.
Operating temperature ranges from -65°C to 150°C. The component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The KSC5603DTU is an NPN silicon bipolar transistor manufactured by onsemi, designed for power applications.
The maximum collector-emitter voltage (VCEO) for the KSC5603DTU is 800V.
The KSC5603DTU has a continuous collector current rating of 3A.
The KSC5603DTU has a maximum power dissipation of 100W.
The KSC5603DTU is supplied in a TO-220-3 package.
The operating temperature range for the KSC5603DTU is -65°C to 150°C.