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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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22,990 pcs
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22990 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NPN bipolar junction transistor (BJT) from On Semiconductor, part number KSC5502TU, is designed for applications requiring high voltage and current handling. It offers a maximum collector-emitter voltage of 600V and can handle a continuous collector current of 2A.
The transistor has a power dissipation rating of 50W and a minimum DC current gain (hFE) of 12 at 500mA and 2.5V. The saturation voltage (Vce) is a maximum of 1.5V at 200mA and 1A. It operates at junction temperatures up to 150°C.
Packaged in a TO-220-3 configuration, the KSC5502TU is designed for through-hole mounting. Its robust construction and electrical characteristics make it suitable for various power switching and amplification circuits.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are unverified from the database.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The KSC5502TU transistor has a maximum voltage rating of 600V.
The KSC5502TU transistor can handle a continuous current of 2A.
The KSC5502TU transistor is supplied in a TO-220-3 package.
The operating temperature for the KSC5502TU transistor is up to 150°C (TJ).
The KSC5502TU is listed as RoHS3 Compliant.