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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,925 pcs
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3925 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NPN bipolar junction transistor (BJT) from On Semiconductor, part number KSC5502DTTU, is designed for general-purpose applications requiring high voltage and current handling. It offers a maximum collector-emitter voltage of 600V and a continuous collector current of 2A, with a power dissipation of 50W.
The transistor is suitable for through-hole mounting and comes in a standard TO-220-3 package. Key electrical characteristics include a minimum DC current gain (hFE) of 4 at 1A and a Vce saturation of 1.5V at 200mA and 1A. The operating frequency reaches up to 11MHz, and the maximum junction temperature is 150°C.
This component is ideal for power switching and amplification circuits where robust performance is needed. Its through-hole design facilitates easy integration into traditional PCB layouts.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage rating for the KSC5502DTTU is 600V.
The KSC5502DTTU can handle a continuous collector current of 2A.
The power dissipation for the KSC5502DTTU is 50W.
The KSC5502DTTU is designed for through-hole mounting.
The KSC5502DTTU comes in a TO-220-3 package.
The operating temperature for the KSC5502DTTU is up to 150°C (TJ).